Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Désirée Queren"'
Autor:
Christoph Eichler, Teresa Lermer, Adrian Stefan Avramescu, Georg Brüderl, Stephan Lutgen, Désirée Queren, Uwe Strauß, Alvaro Gomez-Iglesias, Jens Müller
Publikováno v:
physica status solidi (b). 248:652-657
The challenges of green InGaN lasers are discussed concerning material quality as a function of InGaN composition, quantum well design and piezoelectrical fields. Investigations of polar quantum well designs and comparison with simulated non-polar st
Autor:
Uwe Strauss, Jens Müller, Adrian Stefan Avramescu, Georg Bruederl, Stephan Lutgen, Teresa Lermer, Désirée Queren
Publikováno v:
physica status solidi (a). 207:1318-1322
We present true green InGaN ridge waveguide (RWG) laser diodes (LDs) at 520 nm on c-plane GaN substrates in pulse operation at room temperature. Defect reduction in the In-rich quantum wells by improving growth conditions of the epitaxial layers is t
Autor:
Marc Schillgalies, Christoph Eichler, Andreas Breidenassel, Adrian Stefan Avramescu, Uwe Strauss, Jens Müller, Ulrich T. Schwarz, Stephan Lutgen, Teresa Lermer, Désirée Queren, W. G. Scheibenzuber
Publikováno v:
physica status solidi (a). 207:1328-1331
In this paper we investigate the waveguiding (WG) of direct green InGaN laser diodes grown on c-plane GaN substrates. The problem of parasitic modes emerges due to the reduced refractive index difference between the GaN waveguide and AlGaN cladding l
Autor:
Georg Brüderl, Désirée Queren, Ansgar Laubsch, Lutgen, A. Avramescu, M. Schillgalies, Uwe Strauss
Publikováno v:
physica status solidi c. 5:2192-2194
We have studied the influence of impurities in InGaN lasers. A magnesium background doping in InGaN quantum wells increases non-radiative recombination significantly. Consequently, internal quantum efficiency decreases causing a large drop in laser p
Autor:
Teresa Lermer, Uwe Strauss, Andreas Breidenassel, Jens Müller, Adrian Stefan Avramescu, Stephan Lutgen, Désirée Queren, Marc Schillgalies, Dimitri Dini
Publikováno v:
Novel In-Plane Semiconductor Lasers IX.
Mobile laser projection is of great commercial interest. Today, a key parameter in embedded mobile applications is the optical output power and wall plug efficiency. We report improvements of the performance of true blue single mode InGaN laser at 45
Autor:
Stephan Lutgen, M. Schillgalies, Uwe Strauss, Dini Dimitri, Alfred Lell, Désirée Queren, A. Avramescu, Georg Brüderl, Christoph Eichler, Andreas Breidenassel
Publikováno v:
CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.
Recently for on-the-go multimedia appliances an interesting accessory is the mobile pico-projector based on laser diodes sources. Good colour reproduction and no necessity to focus the image are the main advantages deriving from laser light use. Such
Autor:
Stephan Lutgen, Tobias Meyer, Georg Brüderl, Adrian Stefan Avramescu, Matthias Peter, Désirée Queren, Marc Schillgalies, Uwe Strauß
Publikováno v:
physica status solidi c. 6
We have analyzed the quantum well stability of blue-green emitting laser diodes grown on c -plane GaN substrates. Different parameters such as the material composition of the surrounding layers of the quantum well and the number of quantum wells were
Autor:
Bernd Schmidtke, Uwe Strauß, Marc Schillgalies, Ulrich T. Schwarz, Harald Braun, Stephan Lutgen, Désirée Queren
Publikováno v:
physica status solidi c. 6
We investigate the spectral and temporal behavior of conventional narrow ridge (Al,In)GaN laser diodes (LDs) emitting at a wavelength of about 405 nm, grown on low dislocation density GaN substrate. In time resolved measurements of the lasing spectra
Autor:
Uwe Strauß, Stefanie Brüninghoff, Matthias Sabathil, Sönke Tautz, Désirée Queren, Stephan Lutgen
Publikováno v:
SPIE Proceedings.
True blue lasers with wavelengths of ~450 nm are of great interest for full color laser projection. These kind of applications usually require high output power and, in particular, an excellent wall plug efficiency within a wide temperature range. In
Autor:
Uwe Strauss, Stefanie Brüninghoff, Désirée Queren, Ulrich T. Schwarz, Dominik Scholz, Alfred Lell, Harald Braun
Publikováno v:
Optics express. 16(10)
(Al,In)GaN–based laser diodes with ridge widths broader than a few micrometer tend to show filamentation effects in the lateral direction. By time–resolved scanning near–field optical microscopy, we find different kinds of filaments depending o