Zobrazeno 1 - 10
of 56
pro vyhledávání: '"D, Sodini"'
Publikováno v:
Solid-State Electronics, 42(6), 901-905. Elsevier
For the relative amplitude of the random telegraph signal noise (RTS) in a MOS transistor ΔG/G=ΔI/I=1/N=qgm/WlCoxI often holds with N the total number of free carriers. Here, strong deviations from this simple behavior will be explained in terms of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3efe5f8c2d847efa61be43e2f58f5318
https://doi.org/10.1016/S0038-1101(98)00105-1
https://doi.org/10.1016/S0038-1101(98)00105-1
Publikováno v:
Microelectronic Engineering. 16:475-480
The principle of a fast signal processing technique to be added on a scanning electron microscope devoted to electron beam testing is presented. It results from a computer controlled Phase Selective Voltage Contrast system using the blanked beam oper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffdf9ef0f94610d6952d9752850df4cb
https://doi.org/10.1016/0167-9317(92)90369-3
https://doi.org/10.1016/0167-9317(92)90369-3
Publikováno v:
British journal of pharmacology. 153(8)
Prenatal patency of ductus arteriosus is maintained by prostaglandin (PG) E(2) in concert with nitric oxide (NO) and carbon monoxide (CO). Accordingly, we have previously found that NO activity increases upon deletion of either COX. Here, we have exa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::711ccc8db21fe690c780a50ed66a281c
https://pubmed.ncbi.nlm.nih.gov/18297107
https://pubmed.ncbi.nlm.nih.gov/18297107
Autor:
B, Baragatti, F, Brizzi, S, Barogi, V E, Laubach, D, Sodini, E G, Shesely, R F, Regan, F, Coceani
Publikováno v:
British journal of pharmacology. 151(1)
Prenatal patency of ductus arteriosus is maintained by prostaglandin (PG) E(2), possibly along with nitric oxide (NO) and carbon monoxide (CO), and cyclooxygenase (COX) deletion upregulates NO. Here, we have examined enzyme source and action of NO fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::367f2e6f63e142745dc30e1660d749a2
https://pubmed.ncbi.nlm.nih.gov/17351656
https://pubmed.ncbi.nlm.nih.gov/17351656
Publikováno v:
Noise in Physical Systems and 1/F Fluctuations.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e706d14c50e36d01a83370fd674a629
https://doi.org/10.1142/9789812811165_0085
https://doi.org/10.1142/9789812811165_0085
Publikováno v:
IEE Proceedings - Circuits, Devices and Systems. 151:102
An overview of theoretical 1/f noise models is given. Analytical expressions showing the device geometry and bias dependencies of 1/f noise in all conduction regimes are summarised. Novel experimental studies on 1/f noise in MOS transistors are prese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cedc16d593930baff742e178f5652728
https://doi.org/10.1049/ip-cds:20040459
https://doi.org/10.1049/ip-cds:20040459
Publikováno v:
Solid-State Electronics. 17:11-16
Van der Ziel has shown that at high frequencies the gate noise of a field effect transistor increases rapidly with increasing frequency. This effect is attributed to the thermal noise of the conducting channel and is caused by the capacitive coupling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73b074bd41eea7cdbbd02caf29a0b192
https://doi.org/10.1016/0038-1101(74)90107-5
https://doi.org/10.1016/0038-1101(74)90107-5
Publikováno v:
Physica B+C. 129:568-572
In order to obtain the transfer inefficiency of GaAs BCCD's operated in the GHz range, a numerical simulation of their behaviour is presented. The influence of the technology (3 and 4 phases devices, epitaxial or ion-implanted channel, Schottky or MI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0501e8dc90d438031cad32b29e2ec727
https://doi.org/10.1016/0378-4363(85)90646-1
https://doi.org/10.1016/0378-4363(85)90646-1
Publikováno v:
Solid-State Electronics. 24:635-642
A field dependent mobility model for use in quasi-unidimensional numerical analysis of JG FET is proposed. This model takes into account the electrical data (mobility and diffusion laws vs electric field) obtained on Si bulk material, the technologic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75fd9448dc04fed9f70c8a7a80f6429a
https://doi.org/10.1016/0038-1101(81)90192-1
https://doi.org/10.1016/0038-1101(81)90192-1
Publikováno v:
Physica. 74:613-622
Taking into account the finite lenght of the gate of a JG FET and the variation of the mobility versus electric field, it is shown, through a self-consistent hypothesis, that the electrical and geometrical properties of the active conducting channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f78a462fa6b826ca2dc7e567081d07f
https://doi.org/10.1016/0031-8914(74)90365-6
https://doi.org/10.1016/0031-8914(74)90365-6