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of 272
pro vyhledávání: '"D, Nesheva"'
Autor:
D. Nesheva, M. Grujić-Brojčin, M.J. Šćepanović, Z. Levi, V. Dzhurkov, T. Hristova-Vasileva, B. Vasić
Nanolayers of porous ZnSe with thickness of ∼50 nm were prepared by thermal vacuum evaporation, applying continuous and periodically interrupted deposition at different deposition rates. The surface morphology and film composition are studied by SE
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Akademický článek
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Publikováno v:
Journal of Physics: Conference Series. 2436:012020
ZnSe films with thickness of 50, 70 and 100 nm were prepared on Corning 7059 glass substrates at room temperature by applying continuous or periodically interrupted physical vapour deposition at very low deposition rates (0.2 and 0.5 nm s−1). Part
Autor:
A. Arias, N. Nedev, M. Curiel, R. Nedev, D. Mateos, E. Manolov, D. Nesheva, B. Valdez, R. Herrera, A. Sanchez
Publikováno v:
Sensor Letters. 13:556-560
Autor:
A. Arias, N. Nedev, D. Nesheva, M. Curiel, E. Manolov, D. Mateos, V. Dzurkov, B. Valdez, O. Contreras, R. Herrera, I. Bineva, J. M. Siqueiros
Publikováno v:
Sensor Letters. 13:561-564
Autor:
Mario Curiel-Alvarez, D. Nesheva, E. Manolov, V. Dzhurkov, N. Nedev, Benjamín Valdez-Salas, J. Paz-Delgadillo
Publikováno v:
Journal of Physics: Conference Series. 1186:012022
Publikováno v:
Thin Solid Films. 520:2085-2091
The infra-red (IR) transmission spectra of SiO x (x ≤ 2) layers containing crystalline or amorphous Si nanoparticles deposited on p-Si substrates is simulated in the range 300–1500 cm − 1 . To that purpose the average dielectric function of the
Publikováno v:
The Journal of Physical Chemistry C. 115:37-46
The transport properties of nonequilibrium (photoexcited) charge carriers in sonochemically synthesized three-dimensional (3D) assemblies of AgBiS2 quantum dots (QDs) deposited as thin films were studied. To characterize the photoconduction of quantu
Autor:
Ivan Petrov, Nicola Nedev, I. Bineva, M. Sardela, J. A. N. T. Soares, Richard T. Haasch, E. Manolov, Mario Curiel, B. Sankaran, Benjamin Valdez, D. Nesheva
Publikováno v:
Materials Science and Engineering: B. 174:132-136
X-ray diffraction and reflectivity, X-ray photoelectron spectroscopy and spectroscopic ellipsometry were applied to study the initial composition, thickness, lattice structure and refractive index of ‘fresh’ and annealed thin SiOx films (∼15 nm