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Thermally induced stress relaxation and densification of spin-on-glass thin films

Autor: C. K. Chiang, D Feiler, Gary W. Lynn, William E. Wallace, W. Xia

Publikováno v: Applied Physics Letters. 76:430-432

The stress–temperature relationship of silica spin-on-glass thin films on silicon wafers was studied. Upon heating, the stress–temperature curves showed a dramatically increasing slope when the temperature of the film was greater than 340 °C. At

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9c0e1a8aa5cccc97cab565148df618e5
https://doi.org/10.1063/1.125777

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Akademický článek

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A Cu/low-κ dual damascene interconnect for high performance and low cost integrated circuits

Autor: J. Brown, D. Dornish, B. Chin, L. Tsau, G. Lai, J. Turner, L. Camilletti, G. Wu, M. Johnson, P. Ding, W. Xia, D. Young, M. Brongo, Q.Z. Liu, C. Vo, L. Cook, J. Wu, J. C. Kuei, V. Ramanathan, C.H. Nguyen, D. Feiler, H. Zhang, B. Zhao, C. Chu, T. Ritzdorf, J. Zhou

Publikováno v: 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).

Copper and a low dielectric constant (low-/spl kappa/) material have been successfully integrated in a dual damascene interconnect architecture. The low-/spl kappa/ material (/spl kappa/=2.2) was used as intra-level dielectric and inter-level dielect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f9fd90c7c2f85265295a51ed07ca7ca8
https://doi.org/10.1109/vlsit.1998.689186

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Aluminum dual damascene interconnects with low-κ intra/inter-level dielectric for reduced capacitance and low cost

Autor: V. Ramanathan, M. Rumer, B. Zhao, H. Zhang, M.A. Biberger, C.H. Nguyen, J. Wu, D. Feiler, M. Brongo, J. C. Kuei, Q.Z. Liu, D. James, V. Sachan

Publikováno v: Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102).

Aluminum dual damascene interconnects using a low dielectric constant (low-/spl kappa/) material as intra/inter level dielectric have been successfully demonstrated. The low-/spl kappa/ material has led to significant reduction in both intra-level an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0a06c39616f95ab8b03d34ac5b526206
https://doi.org/10.1109/iitc.1998.704775

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0.18 μm SiGe BiCMOS technology for wireless and 40 Gb/s communication products

Publikováno v: Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).

A 0.18 /spl mu/m SiGe BiCMOS process optimized for wireless and 40 Gb/s networking applications is described. Bipolar performance of 130 GHz (F/sub t/) and 150 GHz (F/sub max/) is reported. Exceptional LNA characteristics have been measured with 2.5

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::91d79e418329d21fe7a4e76fb3d7de25
https://doi.org/10.1109/bipol.2001.957878

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Serum triiodothyronine elevation with posttraumatic stress disorder: a cross-cultural study

Autor: J, Mason, R, Weizman, N, Laor, S, Wang, A, Schujovitsky, P, Abramovitz-Schneider, D, Feiler, D, Charney

Publikováno v: Biological psychiatry. 39(10)

This study examines the thyroid hormonal profile in Israeli combat veterans with posttraumatic stress disorder (PTSD) and compares it with the previously reported profile in American Vietnam combat veterans with PTSD. Eleven male combat veterans with

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::417f84468bd40c1f3cc354c87e10ce34
https://pubmed.ncbi.nlm.nih.gov/9172703

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