Zobrazeno 1 - 10
of 73
pro vyhledávání: '"D, Buc"'
Autor:
M. Hulman, Henry Romanus, Lothar Spiess, Ivan Hotovy, D. Buc, M. Sojková, Vlastimil Rehacek, Miroslav Mikolášek, Ivan Kostic
Publikováno v:
Applied Surface Science. 544:148719
We present structural, optical and electrical investigations of layered WS2 films prepared on tungsten. A two-step technique has been used to synthesize layered WS2 films using sulfurization of W films sputtered with thinner (1 and 2 nm) and thicker
Publikováno v:
Journal of Physics and Chemistry of Solids. 76:17-21
Polyethylene-terephthalate (PET) foils and glass slides coated with thin conductive layers were used as substrates for TiO2 or ZnO based photoactive electrodes of dye-sensitized solar cells (DSSC) with organo-metallic Ru-dye, standard iodine electrol
Publikováno v:
physica status solidi (a). 209:1384-1389
The impact of radiation damage on the device performance of 4H-SiC Schottky barrier diodes (SBDs) with RuWOx Schottky contacts, which were irradiated at room temperature with 9 MeV electrons (absorbed dose of 50 Gy), is studied by current–voltage (
Publikováno v:
Journal of Electrical Engineering. 61:373-377
Carbon Nanostructures Grown on Fe-Cr-Al Alloy The morphology and nanostructure of carbon nanotubes (CNTs), synthesized directly on Fe-Cr-Al-based alloy substrate using an alcohol catalytic chemical vapour deposition method (ACCVD), were examined by t
Publikováno v:
Journal of Materials Science: Materials in Electronics. 19:783-787
Two types of Schottky diodes were prepared on n-type silicon carbide (4H–SiC) substrates by deposition of ruthenium oxide (RuO2) Schottky contacts or ruthenium tungsten oxide (RuWO x ) Schottky contacts. The RuO2/4H–SiC and RuWO x /4H–SiC Schot
Autor:
Guei Gu Siu, D. Buc, Mária Čaplovičová, Ivan Hotovy, Igor Bello, Jaroslav Kováč, Milan Mikula, Yat Min Chong
Publikováno v:
Thin Solid Films. 515:8723-8727
Boron oxide films were grown on silicon substrates by radio-frequency (rf) unbalanced magnetron sputtering of a boron target in argon–oxygen gas mixtures with different compositions. Microscopic analyses show that overall boron oxide films are amor
Publikováno v:
Chemical Physics Letters. 429:617-621
Schottky diodes were prepared on n-type silicon carbide (4H-SiC) substrates by deposition of ruthenium dioxide contacts. Their electrical and electronic properties were investigated by current-voltage (I-V) and capacitance-voltage (C-V) methods, and
Publikováno v:
Thin Solid Films. 515:658-661
Nanocrystalline NiO thin films were prepared by dc reactive magnetron sputtering in a mixture of oxygen and argon and subsequently coated by Pt on an NiO film surface. Very thin Pt overlayers with a thickness of about 3 and 5 nm have been deposited b
Publikováno v:
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems.
Publikováno v:
Czechoslovak Journal of Physics. 49:393-403
Three sets of titanium oxide layers with different oxygen content were prepared by DC pulsed reactive magnetron sputtering. The layers were characterised by their thickness, conductivity, refractive index, band-gap and flat band potential. The photoe