Zobrazeno 1 - 10
of 46
pro vyhledávání: '"D'Souza, Noel"'
Autor:
D'Souza, Noel, Biswas, Ayan, Ahmad, Hasnain, Fashami, Mohammad Salehi, Al-Rashid, Md Mamun, Sampath, Vimal, Bhattacharya, Dhritiman, Abeed, Md Ahsanul, Atulasimha, Jayasimha, Bandyopadhyay, Supriyo
Publikováno v:
Nanotechnology, vol 44, 442001 (2018)
The need for increasingly powerful computing hardware has spawned many ideas stipulating, primarily, the replacement of traditional transistors with alternate "switches" that dissipate miniscule amounts of energy when they switch and provide addition
Externí odkaz:
http://arxiv.org/abs/1809.08517
Autor:
Zhao, Zhengyang, Jamali, Mahdi, D'Souza, Noel, Zhang, Delin, Bandyopadhyay, Supriyo, Atulasimha, Jayasimha, Wang, Jian-Ping
Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel junctions
Externí odkaz:
http://arxiv.org/abs/1602.05684
Autor:
Bhattacharya, Dhritiman, Al-Rashid, Md Mamun, D'Souza, Noel, Bandyopadhyay, Supriyo, Atulasimha, Jayasimha
Micromagnetic studies of the magnetization change in magnetostrictive nanomagnets subjected to stress are performed for nanomagnets of different sizes. The interplay between demagnetization, exchange and stress anisotropy energies is used to explain
Externí odkaz:
http://arxiv.org/abs/1511.04617
Autor:
D'Souza, Noel Michael
Zinc Oxide (ZnO) is a promising semiconductor material for future transistors and when grown as nanowires, is an exciting prospect for high-performance nanowire field effect transistors (NWFETs). To understand the performance limits of the material a
Externí odkaz:
http://rave.ohiolink.edu/etdc/view?acc_num=ucin1227276454
Nanomagnetic implementations of Boolean logic [1,2] have garnered attention because of their non-volatility and the potential for unprecedented energy-efficiency. Unfortunately, the large dissipative losses that take place when nanomagnets are switch
Externí odkaz:
http://arxiv.org/abs/1404.2980
Nanomagnetic memory and logic are currently seen as promising candidates to replace current digital computing architectures due to its superior energy-efficiency, non-volatility and propensity for highly dense and low-power applications. In this work
Externí odkaz:
http://arxiv.org/abs/1403.2303
Publikováno v:
IEEE Transactions on Nanotechnology, Vol. 11, p. 896, 2012
A circular magnetic disk with biaxial magnetocrystalline anisotropy has four stable magnetization states which can be used to encode a pixel's shade in a black/gray/white image. By solving the Landau-Lifshitz- Gilbert equation, we show that if modera
Externí odkaz:
http://arxiv.org/abs/1109.6932
Publikováno v:
IEEE Transactions on Nanotechnology, vol. 11, no. 2, pp. 418-425, March 2012
Nanomagnets with biaxial magnetocrystalline anisotropy have four stable magnetization orientations that can encode 4-state logic bits (00), (01), (11) and (10). Recently, a 4-state NOR gate derived from three such nanomagnets, interacting via dipole
Externí odkaz:
http://arxiv.org/abs/1105.1818
Publikováno v:
Journal of Physics D: Applied Physics, Vol. 44, 265001 (2011)
The authors show how to implement a 4-state universal logic gate (NOR) using three strain-coupled magnetostrictive-piezoelectric multiferroic nanomagnets (e.g. Ni/PZT) with biaxial magnetocrystalline anisotropy. Two of the nanomagnets encode the 2-st
Externí odkaz:
http://arxiv.org/abs/1101.0980
Autor:
Manju, M.R., Ajay, K.S., D'Souza, Noel M., Hunagund, Shivakumar, Hadimani, R.L., Dayal, Vijaylakshmi
Publikováno v:
In Journal of Magnetism and Magnetic Materials 15 April 2018 452:23-29
