Low-frequency noise in electron irradiated n-GaAs epitaxial layers.

Autor: Ren, L., Baucour, P., Hooge, F. N., Luthjens, L. H., Leijs, M. R.

Publikováno v: Journal of Applied Physics; 3/1/1993, Vol. 73 Issue 5, p2180, 7p, 4 Charts, 7 Graphs

Boundary scattering and 1/f noise.

Autor: Hooge, F. N., Kedzia, J., Vandamme, L. K. J.

Publikováno v: Journal of Applied Physics; Dec1979, Vol. 50 Issue 12, p8087-8089, 3p

Spectroscopy of low-frequency noise in δ-doped GaAs grown by MBE

Autor: Chen, X. Y., Koenraad, P., Hooge, F. N., Wolter, J. H., Claeys, C., Simoen, E.

Publikováno v: Proceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations, Leuven, Belgium, 457-460
STARTPAGE=457;ENDPAGE=460;TITLE=Proceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations, Leuven, Belgium

The noise properties of a δ-doped semiconductor structure was investigated at temperatures from 77 K to 300 K. The temperature-dependence of the parameter α of 1/f noise was experimentally determined. The activation energies of the trapping centers

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::f3b6ec5c0a726694424f8c8f45f903ef
https://research.tue.nl/nl/publications/cded914f-2b2f-4558-b74e-6061ab196d22

ON THE ADDITIVITY OF GENERATION-RECOMBINATION SPECTRA.

Autor: HOOGE, F. N.

Publikováno v: Noise in Physical Systems & 1/F Fluctuations: Icnf 2001, Procs of the 16th Intl Conf; 2001, p555-560, 6p

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