Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Cz. Jasiukiewicz"'
Publikováno v:
Journal of Magnetism and Magnetic Materials. 411:79-83
Using the six-band Kane model of the electron energy spectrum in the valence band of GaMnAs magnetic semiconductor we investigate the dependence of the crystalline magnetic anisotropy on the magnitude of magnetization and on the doping with holes. Ou
Publikováno v:
Acta Physica Polonica A. 128:179-182
Autor:
Caroline L. Poyser, Cz. Jasiukiewicz, Anthony J. Kent, D. Lehmann, D. Srikanthreddy, Mohamed Henini, A. V. Akimov, B. A. Glavin
Publikováno v:
Physical Review Applied. 7
We study the generation of microwave electronic signals by pumping a (311) GaAs Schottky diode with compressive and shear acoustic phonons, generated by femtosecond optical excitation of an Al _lm transducer and mode conversion at the Al-GaAs interfa
Publikováno v:
Acta Physica Polonica A. 128:219-221
Publikováno v:
physica status solidi (b). 247:1201-1206
Young's and shear moduli and Poisson's ratio of polycrystalline solids consisting of two-dimensional quadratic and three-dimensional cubic randomly oriented grains of the same size and shape is studied. Considered polycrystals are initially unstraine
Publikováno v:
physica status solidi (b). 245:557-561
Fourth-rank symmetric tensors, that embody the elastic properties of crystalline anisotropic substances, were constructed for all 2D crystal systems. Using them we obtained explicit expressions for inverse of Young's modulus E(n), inverse of shear mo
Publikováno v:
physica status solidi (b). 245:562-569
Anisotropies of Young's modulus E, the shear modulus G, and Poisson's ratio of all 2D symmetry systems are studied. Simple necessary and sufficient conditions on their elastic compliances are derived to identify if any of these crystals are completel
Autor:
S. Wolski, Józef Barnaś, Vitalii K. Dugaev, Taras Slobodskyy, Wiebke Hansen, Cz. Jasiukiewicz
Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n+-GaAs/n-GaAs multilayer str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b88a0d7c46481abb5ab0aacca950988c
http://arxiv.org/abs/1412.4932
http://arxiv.org/abs/1412.4932
Autor:
Anthony J. Kent, D. Lehmann, Stuart A. Cavill, Cz. Jasiukiewicz, N. M. Stanton, A. V. Akimov, C. T. Foxon, Tin S. Cheng
Publikováno v:
Physica B: Condensed Matter. :110-113
We have used phonon imaging to study the drag current induced by non-equilibrium acoustic phonons in a low-mobility n-type Gallium Nitride epilayer. Current densities up to j=4.7×10 3 A/m 2 were induced by transverse acoustic phonon drag of electron
Autor:
Cz. Jasiukiewicz, D. Lehmann
Publikováno v:
Physica B: Condensed Matter. :226-229
When calculating the electron–phonon matrix elements in GaAs/AlGaAs single heterostructures or Si-inversion layers, the use of Fang–Howard (FH) or other trial electron wave functions in the overlap integrals and form factors is a common practice.