Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Cyrus Emil Tabery"'
Autor:
Dennis R. McKean, Benjamen M. Rathsack, Peter Pirogovsky, Jeff A. Albelo, Timothy B. Stachowiak, David R. Medeiros, Kathleen Lou, C. Grant Willson, Cyrus Emil Tabery, Peter I. Tattersall
Publikováno v:
SPIE Proceedings.
Photoactive compounds have been designed, synthesized and characterized for deep ultraviolet non-chemically amplified resist applications. These resist materials may have potential use in next generation 257nm mask fabrication. Mask fabrication requi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::822c61e0b1d9da722ba4ed38c22f6ebc
https://doi.org/10.1117/12.436887
https://doi.org/10.1117/12.436887
Autor:
Jeff A. Albelo, C. Grant Willson, Benjamen M. Rathsack, Cyrus Emil Tabery, Timothy B. Stachowiak
Publikováno v:
Advances in Resist Technology and Processing XVII.
The demand for smaller and more uniform features on photomasks has inspired consideration of a DUV (257 nm) resist process for optical pattern generation. Chemically amplified resists require storage and exposure in carbon filtered environments, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b660f55db377669a68be9f11da77d85c
https://doi.org/10.1117/12.388345
https://doi.org/10.1117/12.388345
Publikováno v:
SPIE Proceedings.
The inorganic antireflection coating (AR3-chromium oxide) commonly used on photomask blanks was designed to minimize flare in h-line (405 nm) lithography steppers. The reflection of light (flare) off this coating (air-photomask) increases with shorte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39378fa083805e1d833c16b6434665cd
https://doi.org/10.1117/12.373343
https://doi.org/10.1117/12.373343
Autor:
Cyrus Emil Tabery, Cheng-Bai Xu, C. Grant Willson, Mike Pochkowski, Tim Dallas, Benjamen M. Rathsack, Timothy B. Stachowiak
Publikováno v:
SPIE Proceedings.
I-line optical pattern generators using non-chemically amplified resists have become the workhorses for high throughput mask fabrication. The demand for smaller and more uniform features on photomasks has driven the development of a 257 nm optical pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a3d24ae570e6b9b616601f0ab4ca2b3
https://doi.org/10.1117/12.373362
https://doi.org/10.1117/12.373362
Autor:
Clifford L. Henderson, Mike Pochkowski, Cecilia E. Philbin, C. Grant Willson, Franklin D. Kalk, Benjamen M. Rathsack, Cyrus Emil Tabery, Steven Scheer, Peter D. Buck
Publikováno v:
SPIE Proceedings.
The demand for smaller and more uniform features on photomasks is rapidly increasing. The complexity of these patterns is also increasing with the need for optical proximity correction and phase shifting structures. These complex mask features demand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8dee24068c67f12dd4f1afdab91574d
https://doi.org/10.1117/12.350173
https://doi.org/10.1117/12.350173