Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Cyrus E. Tabery"'
Autor:
Moosong Lee, Jinsun Kim, Dohyeon Park, Yeeun Han, Junseong Yoon, Seung Yoon Lee, Chan Hwang, Achim Woessner, Cyrus E. Tabery, Miao Wang, Antonio Corradi, Young-Hoon Song, Yun-A Sung, Thomas Kim, Aileen Soco, Jason Kim, Max Hsieh
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::011cce79672f0505f44ad038b57b7e30
https://doi.org/10.1117/12.2626721
https://doi.org/10.1117/12.2626721
Autor:
Victor Blanco, Rich Wise, Patrick Jaenen, Cyrus E. Tabery, Mircea Dusa, Nader Shamma, Elisabeth Camerotto, Nicola Kissoon, Joost Bekaert, Moyra McManus
Publikováno v:
Advanced Etch Technology for Nanopatterning IX.
Extreme ultraviolet (EUV) lithography is the technology for high volume manufacturing (HVM) of semiconductor ICs for photoresist patterns smaller than 75nm pitch¹. A persistent challenge of the EUV scanner is to supply a high contrast image with eno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1a569877856107a157a0505527baa90
https://doi.org/10.1117/12.2569606
https://doi.org/10.1117/12.2569606
Autor:
Victor M. Blanco Carballo, jimmy chen, Stephane Lariviere, Sara Paolillo, shu-yu lai, Marc Kea, yu-chi Su, Joe Oh, jonathan huang, Gian Lorusso, jim huang, Fu Qiao, Etienne de Poortere, Marleen H. van der Veen, Cyrus E. Tabery, Luke wang
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2019.
In this work we show measurement results on EUV vias through full process integration; after litho (ADI), after etch (AEI) and after CMP polish (API) for a wide range of designs (regular arrays, logic, SRAM, and alignment and overlay mark designs) on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::755017763815845fe975434aec9957e2
https://doi.org/10.1117/12.2536943
https://doi.org/10.1117/12.2536943
Autor:
Hastings Simon Philip Spencer, Etienne de Poortere, Yongjun Wang, Vito Rutigliani, Guillaume Schelcher, Cyrus E. Tabery, Luke wang, Philippe Leray
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
Voltage contrast (VC) is a long known and well established technique to give combined inline sensitivity to electrically relevant measures of defectivity but also local defect isolation and integrated review SEM making the technique a critical piece
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69379b7547c61a25cd1ef4d1c37517a1
https://doi.org/10.1117/12.2516613
https://doi.org/10.1117/12.2516613
Layout hotpot detection is one of the main steps in modern VLSI design. A typical hotspot detection flow is extremely time consuming due to the computationally expensive mask optimization and lithographic simulation. Recent researches try to facilita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e7d28d7cf60f69506f6899d5af6803b
http://arxiv.org/abs/1807.06446
http://arxiv.org/abs/1807.06446
Autor:
Masazumi Matsunobu, Henk Niesing, Chenxi Lin, Jeff Johnson, Alexander Ypma, Cyrus E. Tabery, Venky Subramony, Yi Zou, Linmiao Zhang, William Susanto, Dag Sonntag, Ravin Somasundaram, Bastani Vahid, Hakki Ergun Cekli, Zakir Ullah, Jelle Nije
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
In addition to lithography process and equipment induced variations, processes like etching, annealing, film deposition and planarization exhibit variations, each having their own intrinsic characteristics and leaving an effect, a ‘fingerprint’,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::408cee4e7a6f3141074b7ffdefb3fe2a
https://doi.org/10.1117/12.2297304
https://doi.org/10.1117/12.2297304
Autor:
Philippe Hurat, Ya-Chieh Lai, Ryoung-han Kim, Jun Ye, Cyrus E. Tabery, Yi Zou, Vincent Arnoux, Michel Luc Cote, Luca Mattii, Praveen Raghavan
Publikováno v:
Optical Microlithography XXX.
Publisher’s Note: This paper, originally published on 30-March, 2017, was replaced with a corrected/revised version on 6-April, 2017. If you downloaded the original PDF but are unable to access the revision, please contact SPIE Digital Library Cust
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b46e3b9a60719e1f369be560a2ada850
https://doi.org/10.1117/12.2263861
https://doi.org/10.1117/12.2263861
Autor:
Wei Long Wang, Tam Nguyen, Gek Soon Chua, Ingo Bork, Cyrus E. Tabery, Aki Fujimura, Yi Zou, Byoung Il Choi
Publikováno v:
SPIE Proceedings.
In order to maintain manageable process windows, mask shapes at the 20nm technology node and below become so complex that mask write times reach 40 hours or might not be writeable at all since the extrapolated write time reaches 80 hours. The recentl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00120e87c6d1f9a9dda3777083695d93
https://doi.org/10.1117/12.897037
https://doi.org/10.1117/12.897037
Autor:
Yi Zou, Kenji Yoshimoto, Luigi Capodieci, Harry J. Levinson, Yuansheng Ma, Yunfei Deng, Jongwook Kye, Cyrus E. Tabery
Publikováno v:
SPIE Proceedings.
In the low k1 regime, optical lithography can be extended further to its limits by advanced computational lithography technologies such as Source-Mask Optimization (SMO) without applying costly double patterning techniques. By cooptimizing the source
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0722be9230bdbd25d3f96b821f719422
https://doi.org/10.1117/12.848865
https://doi.org/10.1117/12.848865
Autor:
Linyong Pang, Bob Gleason, Cyrus E. Tabery, Anthony Aadamov, Yunfei Deng, Thuc Dam, Ki-Ho Baik, Jongwook Kye, Luigi Capodieci, Yi Zou
Publikováno v:
SPIE Proceedings.
As increasing complexity of design and scaling continue to push lithographic imaging to its k1 limit, lithographers have been developing computational lithography solutions to extend 193nm immersion lithography to the 22nm technology node. In our pap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0fb12e41e5e18e5210f6bb316553e29
https://doi.org/10.1117/12.848479
https://doi.org/10.1117/12.848479