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Injection locking at 2f of spin torque oscillators under influence of thermal noise

Autor: Tortarolo, M., Lacoste, B., Hem, J., Dieudonné, C., Cyrille, M. -C., Katine, J. A., Mauri, D., Zeltser, A., Buda-Prejbeanu, L. D., Ebels, U.

Experiments, numerical simulations and an analytic model were developed to elucidate the effects of noise in the synchronized state of a tunnel junction based spin torque nano oscillator (STNO). It is demonstrated that in the in plane magnetized stru

Externí odkaz: http://arxiv.org/abs/1706.05998

Enhancing the injection locking range of spin torque oscillators through mutual coupling

Autor: Romera, M., Talatchian, P., Lebrun, R., Merazzo, K. J., Bortolotti, P., Vila, L., Costa, J. D., Ferreira, R., Freitas, P. P., Cyrille, M. -C., Ebels, U., Cros, V., Grollier, J.

We investigate how the ability of the vortex oscillation mode of a spin-torque nano-oscillator to lock to an external microwave signal is modified when it is coupled to another oscillator. We show experimentally that mutual electrical coupling can le

Externí odkaz: http://arxiv.org/abs/1610.06172

Enhancement of the electronic contribution to the low temperature specific heat of Fe/Cr magnetic multilayer

Autor: Revaz, B., Cyrille, M. -C., Zink, B., Schuller, Ivan K., Hellman, F.

We measured the low temperature specific heat of a sputtered $(Fe_{23\AA}/Cr_{12\AA})_{33}$ magnetic multilayer, as well as separate $1000\AA$ thick Fe and Cr films. Magnetoresistance and magnetization measurements on the multilayer demonstrated anti

Externí odkaz: http://arxiv.org/abs/cond-mat/0109097

Crossbar Arrays based on 'Wall' Phase-Change Memory (PCM) and Ovonic- Threshold Switching (OTS) Selector: a Device Integration Challenge Towards New Computing Paradigms in Embedded Applications

Autor: Bourgeois, G., Meli, V., Antonelli, R., Socquet-Clerc, C., Magis, T., Laulagnet, F., Hemard, B., Bernard, M., Fellouh, L., Dezest, P., Krawczyk, J., Dominguez, S., Baudin, F., Garrione, J., Pellissier, C., Dallery, J.-A., Castellani, N., Cyrille, M.-C., Charpin, C., Andrieu, F., Navarro, G.

Publikováno v: IEEE EDTM 2023-7th IEEE Electron Devices Technology and Manufacturing
IEEE EDTM 2023-7th IEEE Electron Devices Technology and Manufacturing, IEEE, Mar 2023, SEOUL, South Korea. ⟨10.1109/EDTM55494.2023.10102961⟩

International audience; In this work, we demonstrate the integration feasibility of Crossbar arrays based on Ovonic-Threshold Switching (OTS) selector and "Wall"-based Phase-Change Memory, realized with a "Double-Patterned Self-Aligned" (DPSA) struct

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::436c262ec3bf28612b19a203a413dadd
https://doi.org/10.1109/edtm55494.2023.10102961