Zobrazeno 1 - 10
of 139
pro vyhledávání: '"Cyril Cabral"'
Autor:
Eduard A. Cartier, Peilin Song, Takashi Ando, Franco Stellari, Ernest Y. Wu, Dirk Pfeiffer, Cyril Cabral, Martin M. Frank
Publikováno v:
IEEE Electron Device Letters. 42:828-831
Near InfraRed (NIR) photon emission is observed from filaments in HfO2 Resistive Random Access Memories (ReRAMs). This technique is non-destructive and offers rapid localization of filaments, enabling statistical analysis of their spatial distributio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d4bf4f7221aeae5e06d9df17b5914c1
https://doi.org/10.1109/led.2021.3071168
https://doi.org/10.1109/led.2021.3071168
Autor:
D. McHerron, Katsuyuki Sakuma, Paul S. Andry, Cyril Cabral, Mukta G. Farooq, Rama Divakaruni, Thomas A. Wassick
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 11:875-878
In this letter, we have demonstrated a packaging technique for 3-D IC with Cu back-end-of-the line (BEOL) on a mixed pitch (55 and $75~\mu \text{m}$ ) advanced ground-rule laminate by developing a 3-D die-stack on substrate (3D-DSS) technology. 3-D D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53f4b622692f1c0da4c9b657453edd4f
https://doi.org/10.1109/tcpmt.2021.3073403
https://doi.org/10.1109/tcpmt.2021.3073403
Autor:
Thomas A. Wassick, Paul S. Andry, Cyril Cabral, Russell Kastberg, Shidong Li, Mukta G. Farooq, Katsuyuki Sakuma, D. McHerron, Rajalingam Sankeerth
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
In this work, a 3D Die-Stack on Substrate (3D-DSS) bonding process has been developed to demonstrate a 3D die stack that has been joined to a mixed pitch ( $5\ \mu\mathrm{m}\ /\ 75\ \mu \mathrm{m}$ ) high density interconnect laminate. By using the 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c8d33e01175c04db3b25994a694d1ea
https://doi.org/10.1109/ectc32696.2021.00056
https://doi.org/10.1109/ectc32696.2021.00056
Autor:
Devendra K. Sadana, Marinus Hopstaken, Oki Gunawan, Stephen W. Bedell, Kevin Han, Jinhan Ren, Chitra Subramanian, Frank R. Libsch, John A. Ott, Ning Li, Cyril Cabral, Ghavam G. Shahidi, William T. Spratt
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 32(49)
Advancement in microelectronics technology enables autonomous edge computing platforms in the size of a dust mote (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::609bbba47e527f62983a358a95c01b95
https://pubmed.ncbi.nlm.nih.gov/33095497
https://pubmed.ncbi.nlm.nih.gov/33095497
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this paper, we study the impact of humidity penetration into ICs (i.e., 14 nm SOI digital ring oscillators and 22 nm SOI mixed-signal LC-tank voltage-controlled oscillators) using controlled breaches of the chip barrier. Based on data collected fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e0f02a15bbd12154468b2c288efc5c8
https://doi.org/10.1109/iedm19573.2019.8993601
https://doi.org/10.1109/iedm19573.2019.8993601
Autor:
Lynne Gignac, Hosadurga Shobha, Paul S. McLaughlin, M. Ali, Chao-Kun Hu, James J. Demarest, C. M. Breslin, Y. Ostrovski, G. Lian, J. Benedict, X.-H. Liu, Jiamin Ni, Cyril Cabral, Motoyama Koichi
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
Mechanisms of electromigration (EM) damage in Cu interconnects through various CMOS nodes are reviewed. Pure Cu and Cu alloy interconnects that were used down to 14 nm node can no longer satisfy the electrical current used for 10 nm node and beyond i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f03817fcd189540ad782b449873da287
https://doi.org/10.1109/iedm.2018.8614678
https://doi.org/10.1109/iedm.2018.8614678
Autor:
Kevin Han, John A. Ott, Chitra Subramanian, Frank R. Libsch, Cyril Cabral, William T. Spratt, Oki Gunawan, Stephen W. Bedell, Marinus Hopstaken, Ghavam G. Shahidi, Ning Li, Jinhan Ren, Devendra K. Sadana
Publikováno v:
Advanced Materials. 32:2070369
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d335e62e309e66094d86007f07c60a76
https://doi.org/10.1002/adma.202070369
https://doi.org/10.1002/adma.202070369
Autor:
Jean Jordan-Sweet, Eric Eisenbraun, Christian Witt, Mikhail Treger, Cyril Cabral, Ismail C. Noyan, Robert Rosenberg, Conal E. Murray
Publikováno v:
Thin Solid Films. 615:107-115
Room temperature recrystallization responses of blanket electroplated Cu thin films deposited under various conditions were monitored in real-time using synchrotron X-ray diffraction. Nominal control of electroplating parameters such as plating curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a519b6dfab5346563561e0e2a8f6edd0
https://doi.org/10.1016/j.tsf.2016.06.056
https://doi.org/10.1016/j.tsf.2016.06.056
Autor:
Conal E. Murray, Jessica Dechene, Michael P. Chudzik, Yu Zhu, Eric D. Marshall, Martin M. Frank, Cyril Cabral, Claude Ortolland
Publikováno v:
IEEE Electron Device Letters. 37:150-153
We demonstrate a thermally stable titanium silicide/titanium nitride (TiSi x /TiN) full metal gate (FMG) for dual-channel gate-first high- $k$ /metal gate complementary metal–oxide–semiconductor technology. Unlike prior tungsten-based FMG, the si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d220b9028c377446c71741ced0a16d8
https://doi.org/10.1109/led.2015.2513760
https://doi.org/10.1109/led.2015.2513760
Publikováno v:
Journal of Vacuum Science & Technology A. 38:040803
Throughout his career, Dr. Stephen Rossnagel and his co-workers have had a profound influence on thin film deposition. His seminal work includes the development of reactive, collimated, and ionized methods of DC and RF magnetron sputtering, as well a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9de99213379ee1d9ca28e173d2b3266
https://doi.org/10.1116/6.0000230
https://doi.org/10.1116/6.0000230