Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Cynthia M. Hanson"'
Publikováno v:
Journal of Electronic Materials. 23:649-652
Carrier concentration spikes at the epilayer/substrate interface were observed in some two-dimensional electron gas AIGaAs/GaAs structures grown by low pressure organometallic vapor phase epitaxy. Using secondary ion mass spectroscopy, the carrier sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dbc1589d4c2e3b75bb0073b9e14171f
https://doi.org/10.1007/bf02653351
https://doi.org/10.1007/bf02653351
Publikováno v:
Journal of Applied Physics. 59:3911-3913
High‐field negative photoconductivity observed below the fundamental band gap of GaAs is attributed to the electric field‐dependent capture cross section of an electron donor level located at 1.2 eV relative to the valence‐band edge and to a dy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1f65ab9aa197b879f6eac26ab378080
https://doi.org/10.1063/1.336735
https://doi.org/10.1063/1.336735