Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Cynthia C. Lee"'
Autor:
Jack W. Baker, Cynthia C. Lee
Publikováno v:
Journal of Earthquake Engineering. 22:708-723
This paper describes an algorithm to efficiently select ground motions from a database while matching a target mean, variance, and correlations of response spectral values at a range of periods. The approach improves an earlier algorithm by Jayaram e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f327e4ce33b9374cf6a89241dee66fc8
https://doi.org/10.1080/13632469.2016.1264334
https://doi.org/10.1080/13632469.2016.1264334
Autor:
Cynthia C. Lee, Iris Tien
Publikováno v:
ASCE-ASME Journal of Risk and Uncertainty in Engineering Systems, Part A: Civil Engineering. 4
As data for monitoring the natural and built environments become increasingly prevalent, integrating information from varied data sources offers a fuller understanding of the impacts damagi...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbf0c2214a56759f75c052234497804b
https://doi.org/10.1061/ajrua6.0000995
https://doi.org/10.1061/ajrua6.0000995
Publikováno v:
MRS Bulletin. 20:41-50
Second to silicon (Si), the most highly developed technology for semiconductor processing exists for gallium arsenide (GaAs). Unfortunately, GaAs processing is more complex than that of Si, mainly because GaAs is a compound semiconductor. Additionall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd39d275b58a419e32266e441cf3daa7
https://doi.org/10.1557/s0883769400044663
https://doi.org/10.1557/s0883769400044663
Autor:
Emily L. Allen, Cynthia C. Lee, Michael D. Deal, Kevin S. Jones, T. E. Haynes, H. G. Robinson
Publikováno v:
Journal of Applied Physics. 76:4571-4575
Experimental observations of dopant diffusion and defect formation are reported as a function of implant temperature in Si implanted GaAs. The diffusion of Si during post‐implant annealing decreases by a factor of 2.5 as the implant temperature inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd5c6da55ed4f51cca6ae801a68727e0
https://doi.org/10.1063/1.357290
https://doi.org/10.1063/1.357290
Publikováno v:
Journal of The Electrochemical Society. 141:2245-2249
The diffusion of Si was studied using secondary ion mass spectroscopy and transmission electron microscopy after implantation into GaAs at energies ranging from 20 to 200 keV and at doses ranging from 1 • 10 ~3 to 1 • 10 ~4 cm -2 followed by furn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1557f3b422be4037ec910449b7000ba
https://doi.org/10.1149/1.2055097
https://doi.org/10.1149/1.2055097
Publikováno v:
AIDS patient care and STDs. 24(12)
Performing rapid HIV testing in nontraditional clinical settings such as dental clinics is a potential method for targeting high-risk individuals who may not otherwise access health care settings that offer HIV testing. In March 2008, Harlem Hospital
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8db0cc7bda81592dd55b91c571eab25e
https://pubmed.ncbi.nlm.nih.gov/21091231
https://pubmed.ncbi.nlm.nih.gov/21091231
Publikováno v:
Applied Physics Letters. 66:355-357
Diffusion of ion implanted Be in AlxGa1−xAs was studied as a function of Al concentration and annealing temperature and was compared to diffusion in GaAs. The behavior of Be in AlxGa1−xAs is similar to that in GaAs, even showing the anomalous beh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d48a264cd2a641ffa65f1f66480136e3
https://doi.org/10.1063/1.114211
https://doi.org/10.1063/1.114211
Publikováno v:
Applied Physics Letters. 64:3302-3304
Implantation damage is believed to play a significant role in dopant diffusion. Described here is an attempt to modify the point defect damage profile of a 40 keV, 29Si implant in GaAs by chemically etching away the top 100 A of the sample after impl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e0576404ba1a5db6cd3042acd0b1127
https://doi.org/10.1063/1.111319
https://doi.org/10.1063/1.111319
Publikováno v:
Applied Physics Letters. 62:501-503
Time‐resolved reflectivity has been used to measure the rate of solid phase epitaxial regrowth (SPER) in situ during annealing of strained Si0.88Ge0.12 epilayers on Si preamorphized by the implantation of Si. The SPER velocities were measured over
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a3f5c591cb91fac14a5358a60295c02
https://doi.org/10.1063/1.108892
https://doi.org/10.1063/1.108892
Autor:
David C. Brady, Robert Y.S. Huang, Minseok Oh, Yi Ma, Cynthia C. Lee, Stefanie Chaplin, Binh Nguyenphiu
Publikováno v:
MRS Proceedings. 470
Due to polycrystallization, the emissivity of amorphous silicon is known to vary during annealing at temperatures above 500°C. This transition from α-Si to poly-Si usually occurs during the ramp and the beginning of steady stages of the rapid therm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9924a789443c2f9de491da95be719972
https://doi.org/10.1557/proc-470-43
https://doi.org/10.1557/proc-470-43