Zobrazeno 1 - 10
of 97
pro vyhledávání: '"Cutivet A"'
Autor:
Cutivet Adrien
Résumé: Parmi les technologies du 21e siècle en pleine expansion, la télécommunication sans-fil constitue une dimension fondamentale pour les réseaux mobiles, l’aéronautique, les applications spatiales et les systèmes de positionnement par
Externí odkaz:
http://hdl.handle.net/11143/7929
Autor:
Guillaume Gommé, Adrien Cutivet, Boussairi Bouzazi, Abderrahim Rahim Boucherif, Tom MacElwee, Christophe Rodriguez, Meriem Bouchilaoun, Hubert Pelletier, Philippe-Olivier Provost, Hassan Maher, Richard Ares
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065123-065123-5 (2020)
Thermal and electrical properties of aluminum nitride (AlN) epilayers grown by chemical beam epitaxy (CBE) were investigated. A high growth rate of 5.9 ± 0.4 µm/h was achieved using trimethyl aluminum and ammonia as group III and V precursors, resp
Externí odkaz:
https://doaj.org/article/0e9fb26e01004e3ca334d6f8f0e0e218
Autor:
Ali Soltani, Meriem Bouchilaoun, Samuel Graham, Georges Pavlidis, Hassan Maher, Christophe Rodriguez, Adrien Cutivet, Bilal Hassan, Francois Boone
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (5), pp.2139-2145. ⟨10.1109/TED.2019.2906943⟩
IEEE Transactions on Electron Devices, 2019, 66 (5), pp.2139-2145. ⟨10.1109/TED.2019.2906943⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (5), pp.2139-2145. ⟨10.1109/TED.2019.2906943⟩
IEEE Transactions on Electron Devices, 2019, 66 (5), pp.2139-2145. ⟨10.1109/TED.2019.2906943⟩
International audience; Abstract:This paper details an extraction procedure to fully model the transient self-heating of transistors from a GaN HEMT technology. Frequency-resolved gate resistance thermometry (f-GRT) is used to extract the thermal imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6adbb5617df6cc2b0d72bbf8d827b410
https://doi.org/10.1109/ted.2019.2906943
https://doi.org/10.1109/ted.2019.2906943
Autor:
Julien Poulain, F. Lecourt, Ahmed Gasmi, Ahmad Al Hajjar, Adrien Cutivet, Remy Leblanc, Bertrand Wroblewski
Publikováno v:
2020 50th European Microwave Conference (EuMC).
This paper presents the design and test results of a 6 to 18 GHz power amplifier MMIC fabricated with a Gallium Nitride process, using a reactively matched non-distributed architecture. This circuit exhibits a gain of 20 dB, input and output return l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d809d738047a4ebc0c981a1a996b4415
https://doi.org/10.23919/eumc48046.2021.9338162
https://doi.org/10.23919/eumc48046.2021.9338162
Akademický článek
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Autor:
Hassan, Bilal, Cutivet, Adrien, Rodriguez, Christophe, Cozette, Flavien, Soltani, Ali, Boone, François, Maher, Hassan
Publikováno v:
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nov 2019, Nashville, United States
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nov 2019, Nashville, United States
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::be8e82ebda392dd141293e9d69e7bcdc
https://hal.archives-ouvertes.fr/hal-02310001
https://hal.archives-ouvertes.fr/hal-02310001
Autor:
Christophe Rodriguez, Francois Boone, Ali Soltani, Adrien Cutivet, Bilal Hassan, Flavien Cozette, Hassan Maher
Publikováno v:
BCICTS
This paper reports on scalable small signal modeling of AlGaN/GaN high-electron-mobility transistors (HEMTs) based on distributed gate resistance model. A distributed gate resistance model (DGRM) is used to model large periphery of GaN HEMT with vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca444cccf786dbaeb68324ff42c4d070
https://doi.org/10.1109/bcicts45179.2019.8972776
https://doi.org/10.1109/bcicts45179.2019.8972776
Autor:
Patrice Denèfle, Stéphanie Cox, Marina Rousseau-Tsangaris, Arnaud Cutivet, Olivier Tredan, Hai-Ha Le, Robert Gardette, Stéphane Dalle, Nancy Abou-Zeid, Larisa Lerner, Brenda Bogaert, Shady Kotb, Yusuf Baran, Pierre Leurent, Jean-Yves Blay, Jean-Marc Holder, Alberto Cambrosio
Publikováno v:
Bulletin du Cancer
Bulletin du Cancer, 2019, 106 (2), pp.97-104. ⟨10.1016/j.bulcan.2019.01.007⟩
Bulletin du Cancer, 2019, 106 (2), pp.97-104. ⟨10.1016/j.bulcan.2019.01.007⟩
International audience; L’oncologie médicale a pris, depuis quelques années, un tournant substantiel en intégrant la dimension génomique dans la prise de décision thérapeutique. En raison de l’accès aux technologies de séquençage (exome
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca22c71b57da3bc6203978f2513512cd
https://hal.science/hal-03778335
https://hal.science/hal-03778335
Autor:
Adrien Cutivet, Abderrahim Rahim Boucherif, Meriem Bouchilaoun, Boussairi Bouzazi, Richard Arès, Hubert Pelletier, Hassan Maher, Christophe Rodriguez, Tom MacElwee, Philippe-Olivier Provost, Guillaume Gommé
Publikováno v:
AIP Advances
AIP Advances, American Institute of Physics-AIP Publishing LLC, 2020, 10 (6), pp.065123. ⟨10.1063/1.5142615⟩
AIP Advances, Vol 10, Iss 6, Pp 065123-065123-5 (2020)
AIP Advances, American Institute of Physics-AIP Publishing LLC, 2020, 10 (6), pp.065123. ⟨10.1063/1.5142615⟩
AIP Advances, Vol 10, Iss 6, Pp 065123-065123-5 (2020)
Thermal and electrical properties of aluminum nitride (AlN) epilayers grown by chemical beam epitaxy (CBE) were investigated. A high growth rate of 5.9 ± 0.4 µm/h was achieved using trimethyl aluminum and ammonia as group III and V precursors, resp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8716d67cb967ac4d3a752495dcb9dd2
https://doi.org/10.1063/1.5142615
https://doi.org/10.1063/1.5142615
Autor:
Adrien Cutivet, Francois Boone, Ali Soltani, Bilal Hassan, Meriem Bouchilaoun, Christophe Rodriguez, Hassan Maher
Publikováno v:
physica status solidi (a)
physica status solidi (a), Wiley, 2019, 216, pp.1800503. ⟨10.1002/pssa.201800503⟩
physica status solidi (a), 2019, 216, pp.1800503. ⟨10.1002/pssa.201800503⟩
physica status solidi (a), Wiley, 2019, 216, pp.1800503. ⟨10.1002/pssa.201800503⟩
physica status solidi (a), 2019, 216, pp.1800503. ⟨10.1002/pssa.201800503⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c2059cfcf56ccde197626ab58952be0
https://hal.archives-ouvertes.fr/hal-02273385
https://hal.archives-ouvertes.fr/hal-02273385