Výsledky vyhledávání - "Cutivet, Adrien"

Dissertation/ Thesis

Caractérisation et modélisation de dispositifs GaN pour la conception de circuits de puissance hyperfréquence

Autor: Cutivet, Adrien

Parmi les technologies du 21e siècle en pleine expansion, la télécommunication sans-fil constitue une dimension fondamentale pour les réseaux mobiles, l’aéronautique, les applications spatiales et les systèmes de positionnement par satellites

Externí odkaz: http://www.theses.fr/2015LIL10194/document

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Akademický článek

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Scalable small signal modeling of AlGaN/GaN HEMT based on distributed gate resistance

Autor: Hassan, Bilal, Cutivet, Adrien, Rodriguez, Christophe, Cozette, Flavien, Soltani, Ali, Boone, François, Maher, Hassan

Publikováno v: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nov 2019, Nashville, United States

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::be8e82ebda392dd141293e9d69e7bcdc
https://hal.archives-ouvertes.fr/hal-02310001

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Temperature monitoring of short-gate length AlGaN/GaN HEMT via an integrated sensor

Autor: Cozette, Flavien, Lesecq, Marie, Defrance, N., Rousseau, Michel, de Jaeger, Jean-Claude, Cutivet, Adrien, Maher, Hassan, Hassan, Maher

Publikováno v: ESSDERC
48th European Solid-State Device Research Conference (ESSDERC 2018)
48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, Germany. pp.134-137, ⟨10.1109/ESSDERC.2018.8486912⟩

International audience; This paper describes a new method to measure AlGaN/GaN High Electron Mobility Transistors (HEMTs) operating temperature in devices dedicated to RF application. A resistive nickel temperature sensor is integrated into HEMT acti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::293f70d60856fd2625af54aee788cfa5
https://doi.org/10.1109/essderc.2018.8486912

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Scaling of GaN HEMTs Thermal Transient Characteristics

Autor: Cutivet, Adrien, Bouchilaoun, Meriem, Hassan, Bilal, Rodriguez, Christophe, Soltani, Ali, Boone, François, Maher, Hassan

Publikováno v: The compound semiconductor week (CSW)
The compound semiconductor week (CSW), May 2018, Boston, United States

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::da829493cfa0cca51a45d3e56c7cf5fc
https://hal.archives-ouvertes.fr/hal-02310050

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Characterization and modeling of transient self-heating in GaN HEMTs

Autor: Cutivet, Adrien, Bouchilaoun, Meriem, Chakroun, Ahmed, Soltani, Ali, Jaouad, Abdelatif, Boone, François, Maher, Hassan

Publikováno v: 12th International Conference on Nitride Semiconductors (ICNS12)
12th International Conference on Nitride Semiconductors (ICNS12), Jul 2017, Strasbourg, France
12th International Conference on Nitride Semiconductors 2017 (ICNS-12)
12th International Conference on Nitride Semiconductors 2017 (ICNS-12), Jul 2017, Strasbourg, France

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::294a73b4c7d5ff97df8a1e724f6172f7
https://hal.archives-ouvertes.fr/hal-02310127

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