Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Curtis J. O'Kelly"'
Organic semiconductor devices are gaining prevalence in various technology fields due to the ease of production, tailorability, and cost. Here, we demonstrate an organic nanowire based memristor de...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d2ed8ba04c70cea56746f7d3db195cc
https://cronfa.swan.ac.uk/Record/cronfa55749
https://cronfa.swan.ac.uk/Record/cronfa55749
Autor:
Heba Abunahla, Mahmoud Al-Qutayri, Said F. Al-Sarawi, Curtis J. O'Kelly, Baker Mohammad, Yasmin Halawani, Maguy Abi Jaoude
Publikováno v:
Microelectronic Engineering. :35-42
In this paper, we investigate the switching behavior of nano-thick microscale Pd/Hf/HfO2-10nm/Pd memristors. Several key electrical characteristics such as the forming voltage and the SET/RESET IV parameters are studied as a function of the device si
Autor:
Curtis J. O’Kelly
Publikováno v:
Handbook of Memristor Networks ISBN: 9783319763743
Handbook of Memristor Networks
Handbook of Memristor Networks
Binary state resistance switching memristors and multistate or continuum resistance memristors have begun to diverge in their application. The former application in non-volatile logic memory and the later with more focus on neuromorphic computation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30f1a136ccc834ef3cc0ec3eb5b56fa5
https://doi.org/10.1007/978-3-319-76375-0_19
https://doi.org/10.1007/978-3-319-76375-0_19
Publikováno v:
Materials Chemistry and Physics. 184:72-81
Sol-gel/drop-coated micro-thick TiO 2 memristors were investigated and developed for low-power radiation sensing. Devices constructed with coated aluminum (Al) electrodes exhibited unipolar I-V characteristics with dynamic turn-on voltage, and progre
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 63:2139-2148
This paper presents a physics-based mathematical model for anionic memristor devices. The model utilizes Poisson- Boltzmann equation to account for temperature effect on device potential at equilibrium and comprehends material effect on device behavi
Publikováno v:
Crystal Growth & Design. 16:7318-7324
Identifying new synthesis methods to produce single crystal metal nanowires has the potential to expand nanowire based technology integration and increase applications. The catalogue of single crystal metal nanostructures is rather limited compared t
Publikováno v:
The Journal of Physical Chemistry C. 120:18971-18976
Bioinspired semiconductor-based devices with adaptive and dynamic properties will have many advantages over conventional static digital silicon-based technologies. The ability to compute, process, and retain information in parallel, without referenci
Publikováno v:
Crystal Growth & Design. 15:5355-5359
In this work, we demonstrate the position controlled growth of single Cu3Si nanostructures using a Ge–Cu bilayer film that contains a pattern of defects on a Si substrate with a thin oxide layer. The defects act as nucleation centers for growth, wh
Autor:
Tomonobu Nakayama, Takashi Nakanishi, Timothy M. Swager, Shinsuke Ishihara, Takeshi Tanaka, Yoshitaka Shingaya, Curtis J. O’Kelly, Takeo Ohsawa, Hiromichi Kataura, Jan Labuta
Publikováno v:
ACS applied materialsinterfaces. 9(43)
As-synthesized single-walled carbon nanotubes (SWCNTs) are a mixture of metallic and semiconducting tubes, and separation is essential to improve the performances of SWCNT-based electric devices. Our chemical sensor monitors the conductivity of an SW
Publikováno v:
ACS Nano
Nanoscale devices that are sensitive to measurement history enable memory applications, and memristors are currently under intense investigation for robustness and functionality. Here we describe the fabrication and performance of a memristor-like de