Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Curtis Goosney"'
Autor:
Evelyne Gil, Eric Tournié, Kirsten E. Moselund, Ray R. LaPierre, Curtis Goosney, Nebile Isik Goktas, Yamina André, Heinz Schmid, Thierry Taliercio, Gabin Grégoire, Philipp Staudinger, Mohammed Zeghouane, Agnès Trassoudaine
Publikováno v:
Crystal Growth & Design
Crystal Growth & Design, American Chemical Society, 2021, 21 (9), pp.5158-5163. ⟨10.1021/acs.cgd.1c00518⟩
Crystal Growth & Design, 2021, 21 (9), pp.5158-5163. ⟨10.1021/acs.cgd.1c00518⟩
Crystal Growth & Design, American Chemical Society, 2021, 21 (9), pp.5158-5163. ⟨10.1021/acs.cgd.1c00518⟩
Crystal Growth & Design, 2021, 21 (9), pp.5158-5163. ⟨10.1021/acs.cgd.1c00518⟩
International audience; We report on the selective area growth of InAs nanowires (NWs) by the catalyst-free vapor−solid method. Well-ordered InAs NWs were grown on GaAs(111)B and Si(111) substrates patterned with a dielectric mask using hydride vap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e861644e6f89d10533d101bbebe8effb
https://hal.archives-ouvertes.fr/hal-03336861
https://hal.archives-ouvertes.fr/hal-03336861
Autor:
Maurizio Passacantando, Aniello Pelella, A. Di Bartolomeo, Filippo Giubileo, Alessandro Grillo, Enver Faella, Curtis Goosney, Ray R. LaPierre
A piezoelectrically driven metallic nanoprobe is installed inside a scanning electron microscope to perform local characterization of the field emission properties of InSb nanopillars. The tip-shaped anode can be precisely positioned at sub-micron di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3d662458a36b45a84a881f03833b6c1
http://hdl.handle.net/11386/4757796
http://hdl.handle.net/11386/4757796
Autor:
Laura Iemmo, Filippo Giubileo, Alessandro Grillo, Aniello Pelella, Maurizio Passacantando, Antonio Di Bartolomeo, Francesca Urban, Curtis Goosney, Ray R. LaPierre
InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated tungsten probe-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67dc35319e410fe77ce557251ee9b94d
http://arxiv.org/abs/2004.13340
http://arxiv.org/abs/2004.13340
Publikováno v:
Infrared Physics & Technology. 111:103566
InAsSb pillars were investigated for multispectral photodetection in the long wavelength infrared (LWIR) region. An InAs0.19Sb0.81 thin film was successfully grown on Si (1 0 0) substrate, utilizing an AlSb buffer layer to alleviate the large lattice
Publikováno v:
Semiconductor Science and Technology. 34:035023
InSb nanowire (NW) arrays fabricated by a top-down etching process were investigated for multispectral infrared photodetection. A 2.5 ?m thick film of InSb was grown on Si (100) by molecular beam epitaxy using an AlSb buffer layer to alleviate defect