Zobrazeno 1 - 10
of 406
pro vyhledávání: '"Curson P"'
Autor:
D'Anna, Nicolò, Bragg, Jamie, Skoropata, Elizabeth, Hernández, Nazareth Ortiz, McConnell, Aidan G., Clémence, Maël, Ueda, Hiroki, Constantinou, Procopios C., Spruce, Kieran, Stock, Taylor J. Z., Fearn, Sarah, Schofield, Steven R., Curson, Neil J., Sanchez, Dario Ferreira, Grolimund, Daniel, Staub, Urs, Matmon, Guy, Gerber, Simon, Aeppli, Gabriel
Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightforward to characterize classic III-V and group IV heterostructures consi
Externí odkaz:
http://arxiv.org/abs/2410.00241
Autor:
Banerjee, N., Bell, C., Ciccarelli, C., Hesjedal, T., Johnson, F., Kurebayashi, H., Moore, T. A., Moutafis, C., Stern, H. L., Vera-Marun, I. J., Wade, J., Barton, C., Connolly, M. R., Curson, N. J., Fallon, K., Fisher, A. J., Gangloff, D. A., Griggs, W., Linfield, E., Marrows, C. H., Rossi, A., Schindler, F., Smith, J., Thomson, T., Kazakova, O.
This Roadmap provides an overview of the critical role of materials in exploiting spin and topology for next-generation quantum technologies including computing, sensing, information storage and networking devices. We explore the key materials system
Externí odkaz:
http://arxiv.org/abs/2406.07720
Autor:
Bustamante, José, Miyahara, Yoichi, Fairgrieve-Park, Logan, Spruce, Kieran, See, Patrick, Curson, Neil, Stock, Taylor, Grutter, Peter
The ongoing development of single electron, nano and atomic scale semiconductor devices would benefit greatly from a characterization tool capable of detecting single electron charging events with high spatial resolution, at low temperature. In this
Externí odkaz:
http://arxiv.org/abs/2403.13935
Autor:
Cowie, Megan, Constantinou, Procopios C., Curson, Neil J., Stock, Taylor J. Z., Grutter, Peter
We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and amplitudes. Thes
Externí odkaz:
http://arxiv.org/abs/2403.07251
Autor:
Stock, Taylor J. Z., Warschkow, Oliver, Constantinou, Procopios C., Bowler, David R., Schofield, Steven R., Curson, Neil J.
Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom engineered lattices are anticipated to enable
Externí odkaz:
http://arxiv.org/abs/2311.05752
Autor:
Masteghin, Mateus G., Gervais, Toussaint, Clowes, Steven K., Cox, David C., Zelyk, Veronika, Pattammattel, Ajith, Chu, Yong S., Kolev, Nikola, Stock, Taylor Z., Curson, Neil, Evans, Paul G., Stuckelberger, Michael, Murdin, Benedict N.
We report X-ray fluorescence (XRF) imaging of nanoscale inclusions of impurities for quantum technology. A very bright diffraction-limited focus of the X-ray beam produces very high sensitivity and resolution. We investigated gallium (Ga) dopants in
Externí odkaz:
http://arxiv.org/abs/2310.03409
Autor:
Tseng, Li-Ting, Karadan, Prajith, Kazazis, Dimitrios, Constantinou, Procopios C., Stock, Taylor J. Z., Curson, Neil J., Schofield, Steven R., Muntwiler, Matthias, Aeppli, Gabriel, Ekinci, Yasin
Publikováno v:
L.-T. Tseng, Science Advances, Vol 9, eadf5997 (2023)
In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolu
Externí odkaz:
http://arxiv.org/abs/2310.01268
Autor:
Constantinou, Procopios, Stock, Taylor J. Z., Crane, Eleanor, Kölker, Alexander, van Loon, Marcel, Li, Juerong, Fearn, Sarah, Bornemann, Henric, D'Anna, Nicolò, Fisher, Andrew J., Strocov, Vladimir N., Aeppli, Gabriel, Curson, Neil J., Schofield, Steven R.
Two-dimensional dopant layers ($\delta$-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknes
Externí odkaz:
http://arxiv.org/abs/2309.17413
The Si/SiO$_2$ interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-based quantum sensors and computers, as well as nanoelectronic devices. He
Externí odkaz:
http://arxiv.org/abs/2306.13648
Autor:
D'Anna, Nicolò, Sanchez, Dario Ferreira, Matmon, Guy, Bragg, Jamie, Constantinou, Procopios C., Stock, Taylor J. Z., Fearn, Sarah, Schofield, Steven R., Curson, Neil J., Bartkowiak, Marek, Soh, Y., Grolimund, Daniel, Gerber, Simon, Aeppli, Gabriel
Publikováno v:
Adv. Electron. Mater. 2023, 2201212
The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous and arsen
Externí odkaz:
http://arxiv.org/abs/2208.09379