Zobrazeno 1 - 10
of 98
pro vyhledávání: '"Curson, N"'
Autor:
Banerjee, N., Bell, C., Ciccarelli, C., Hesjedal, T., Johnson, F., Kurebayashi, H., Moore, T. A., Moutafis, C., Stern, H. L., Vera-Marun, I. J., Wade, J., Barton, C., Connolly, M. R., Curson, N. J., Fallon, K., Fisher, A. J., Gangloff, D. A., Griggs, W., Linfield, E., Marrows, C. H., Rossi, A., Schindler, F., Smith, J., Thomson, T., Kazakova, O.
This Roadmap provides an overview of the critical role of materials in exploiting spin and topology for next-generation quantum technologies including computing, sensing, information storage and networking devices. We explore the key materials system
Externí odkaz:
http://arxiv.org/abs/2406.07720
Autor:
Bozkurt, M., Mahani, M. R., Studer, P., Tang, J. -M., Schofield, S. R., Curson, N. J., Flatte, M. E, Silov, A. Yu., Hirjibehedin, C. F., Canali, C. M., Koenraad, P. M.
Publikováno v:
Physical Review B 88, 205203 (2013)
We investigate the effect of an external magnetic field on the physical properties of the acceptor hole states associated with single Mn acceptors placed near the (110) surface of GaAs. Crosssectional scanning tunneling microscopy images of the accep
Externí odkaz:
http://arxiv.org/abs/1304.3303
Publikováno v:
Phys. Rev. B 69, 195303 (2004)
We use scanning tunneling microscopy (STM) and Auger electron spectroscopy to study the behavior of adsorbed phosphine (PH$_{3}$) on Si(001), as a function of annealing temperature, paying particular attention to the formation of the Si-P heterodimer
Externí odkaz:
http://arxiv.org/abs/cond-mat/0310297
Autor:
Schofield, S. R., Curson, N. J., Simmons, M. Y., Ruess, F. J., Hallam, T., Oberbeck, L., Clark, R. G.
We demonstrate the controlled incorporation of P dopant atoms in Si (001) presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si (001) and show that it is possible t
Externí odkaz:
http://arxiv.org/abs/cond-mat/0307599
Autor:
Schofield, S. R., Marks, N. A., Curson, N. J., O'Brien, J. L., Brown, G. W., Simmons, M. Y., Clark, R. G., Hawley, M. E., Wilson, H. F.
Publikováno v:
Phys. Rev. B 69, 085312 (2004)
Dimer vacancy (DV) defect complexes in the Si(001)2x1 surface were investigated using high-resolution scanning tunneling microscopy and first principles calculations. We find that under low bias filled-state tunneling conditions, isolated 'split-off'
Externí odkaz:
http://arxiv.org/abs/cond-mat/0305065
Autor:
Oberbeck, L., Curson, N. J., Simmons, M. Y., Brenner, R., Hamilton, A. R., Schofield, S. R., Clark, R. G.
The incorporation of phosphorus in silicon is studied by analyzing phosphorus delta-doped layers using a combination of scanning tunneling microscopy, secondary ion mass spectrometry and Hall effect measurements. The samples are prepared by phosphine
Externí odkaz:
http://arxiv.org/abs/cond-mat/0208355
Autor:
O'Brien, J. L., Schofield, S. R., Simmons, M. Y., Clark, R. G., Dzurak, A. S., Curson, N. J., Kane, B. E., McAlpine, N. S., Hawley, M. E., Brown, G. W.
Publikováno v:
Phys. Rev. B 64, 161401(R) (2001)
The quest to build a quantum computer has been inspired by the recognition of the formidable computational power such a device could offer. In particular silicon-based proposals, using the nuclear or electron spin of dopants as qubits, are attractive
Externí odkaz:
http://arxiv.org/abs/cond-mat/0104569
Autor:
Clark, R. G., Brenner, R., Buehler, T. M., Chan, V., Curson, N. J., Dzurak, A. S., Gauja, E., Goan, H. S., Greentree, A. D., Hallam, T., Hamilton, A. R., Hollenberg, L. C. L., Jamieson, D. N., McCallum, J. C., Milburn, G. J., O'Brien, J. L., Oberbeck, L., Pakes, C. I., Prawer, S. D., Reilly, D. J., Ruess, F. J., Schofield, S. R., Simmons, M. Y., Stanley, F. E., Starrett, R. P., Wellard, C., Yang, C.
Publikováno v:
Philosophical Transactions: Mathematical, Physical and Engineering Sciences, 2003 Jul . 361(1808), 1451-1471.
Externí odkaz:
https://www.jstor.org/stable/3559252
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.