Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Cung Tran"'
Autor:
Christopher L. Panuski, Ian Christen, Momchil Minkov, Cole J. Brabec, Sivan Trajtenberg-Mills, Alexander D. Griffiths, Jonathan J. D. McKendry, Gerald L. Leake, Daniel J. Coleman, Cung Tran, Jeffrey St Louis, John Mucci, Cameron Horvath, Jocelyn N. Westwood-Bachman, Stefan F. Preble, Martin D. Dawson, Michael J. Strain, Michael L. Fanto, Dirk R. Englund
Publikováno v:
Nature Photonics. 16:834-842
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63a7f31653c698411bb34a051814a0cb
https://doi.org/10.1038/s41566-022-01086-9
https://doi.org/10.1038/s41566-022-01086-9
Autor:
Christopher Panuski, Ian Christen, Sivan Trajtenberg Mills, Cole Brabec, Momchil Minkov, Alexander Griffiths, Jonathan J.D. McKendry, Gerald Leake, Daniel Coleman, Cung Tran, Jeffrey St Louis, John Mucci, Cameron Horvath, Jocelyn Westwood-Bachman, Stefan Preble, Martin Dawson, Michael Fanto, Michael Strain, Dirk Englund
Publikováno v:
Conference on Lasers and Electro-Optics.
We present inverse-designed arrays of vertically-coupled, high-finesse, wavelength-scale photonic crystal cavities in a commercial foundry. Dynamically controlling each pixel with a high-speed (~100 MHz) µLED display enables efficient spatial light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0028e38efc3739c42b3227ac0c3e01ef
https://doi.org/10.1364/cleo_si.2022.sm4p.1
https://doi.org/10.1364/cleo_si.2022.sm4p.1
Autor:
Christopher L. Panuski, Ian Christen, Momchil Minkov, Cole J. Brabec, Sivan Trajtenberg-Mills, Alexander D. Griffiths, Jonathan J. D. McKendry, Gerald L. Leake, Daniel J. Coleman, Cung Tran, Jeffrey St Louis, John Mucci, Cameron Horvath, Jocelyn N. Westwood-Bachman, Stefan F. Preble, Martin D. Dawson, Michael J. Strain, Michael L. Fanto, Dirk R. Englund
Publikováno v:
Nature Photonics. 17:208-208
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3760c53340e8a8dbdc1ce11b38c3bda2
https://doi.org/10.1038/s41566-022-01145-1
https://doi.org/10.1038/s41566-022-01145-1
Autor:
Chienfan Yu, Javier Ayala, Cung Tran, James Gay, Anthony Santiago, Eric Meyette, Elizabeth Hampton, Garrett Oakley, Kenneth Bandy, Timothy McCormack, Rajasekhar Venigalla, Frederick Scholl
Publikováno v:
2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
During manufacturing transitioning from 90 nm to 65 nm node in IBM's 300 mm fab, FEOL (front end of line) defect pareto shifted as a result of the changes in integration scheme. By combining the optically based in-line inspection and electrical kerf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc8e5a8abe6bdb11a9b1297487a73e49
https://doi.org/10.1109/asmc.2008.4528997
https://doi.org/10.1109/asmc.2008.4528997