Zobrazeno 1 - 10
of 107
pro vyhledávání: '"Culbertson, James. C."'
Autor:
Fonseca, Jose J., Yeats, Andrew L., Blue, Brandon, Zalalutdinov, Maxim, Brintlinger, Todd, Simpkins, Blake S., Ratchford, Daniel C., Culbertson, James C., Grim, Joel Q., Carter, Samuel G., Ishigami, Masa, Stroud, Rhonda M., Cress, Cory, Robinson, Jeremy T.
Publikováno v:
Nature Communications 11, 5 (2020)
The interaction between two-dimensional crystals (2DCs) and metals is ubiquitous in 2D material research. Here we report how 2DC overlayers influence the recrystallization of relatively thick metal films and the subsequent synergetic benefits this pr
Externí odkaz:
http://arxiv.org/abs/1912.07716
Autor:
Jugdersuren, Battogtokh, Liu, Xiao, Culbertson, James C., Mahadik, Nadeemullah, Thomas, Owain, Shu, Yi
Publikováno v:
Journal of Applied Physics; 12/7/2023, Vol. 134 Issue 21, p1-8, 8p
Autor:
McCreary, Kathleen M., Hanbicki, Aubrey T., Jernigan, Glenn G., Culbertson, James C., Jonker, Berend T.
Publikováno v:
Scientific Reports 6, Article number: 19159 (2016)
Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. While fundamental investigations can be performed on exfoliated material, large-area and high quality materials are essentia
Externí odkaz:
http://arxiv.org/abs/1512.00264
Autor:
Metcalf, Thomas H., Liu, Xiao, Jernigan, Glenn, Culbertson, James C., Abernathy, Matthew, Molina-Ruiz, Manel, Hellman, Frances
Publikováno v:
In Journal of Alloys and Compounds 5 March 2021 856
Autor:
Liu, Xiao, Abernathy, Matthew R., Metcalf, Thomas H., Jugdersuren, Battogtokh, Culbertson, James C., Molina-Ruiz, Manel, Hellman, Frances
Publikováno v:
In Journal of Alloys and Compounds 25 February 2021 855 Part 2
Autor:
Robinson, Jeremy T., Schmucker, Scott W., Diaconescu, C. Bogdan, Long, James P., Culbertson, James C., Ohta, Taisuke, Friedman, Adam L., Beechem, Thomas E.
Direct, tunable coupling between individually assembled graphene layers is a next step towards designer two-dimensional (2D) crystal systems, with relevance for fundamental studies and technological applications. Here we describe the fabrication and
Externí odkaz:
http://arxiv.org/abs/1301.0246
Autor:
Tedesco, Joseph L., Jernigan, Glenn G., Culbertson, James C., Hite, Jennifer K., Yang, Yang, Daniels, Kevin M., Myers-Ward, Rachael L., Eddy, Jr., Charles R., Robinson, Joshua A., Trumbull, Kathleen A., Wetherington, Maxwell T., Campbell, Paul M., Gaskill, D. Kurt
Publikováno v:
Appl. Phys. Lett. 96, 222103 (2010)
Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of a
Externí odkaz:
http://arxiv.org/abs/1007.5064
Autor:
Caldwell, Joshua D., Anderson, Travis J., Culbertson, James C., Jernigan, Glenn G., Hobart, Karl D., Kub, Fritz J., Tadjer, Marko J., Tedesco, Joseph L., Hite, Jennifer K., Mastro, Michael A., Myers-Ward, Rachael L., Eddy Jr., Charles R., Campbell, Paul M., Gaskill, D. Kurt
Publikováno v:
ACS Nano 4(2), 1108-1114 (2010)
In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and
Externí odkaz:
http://arxiv.org/abs/0910.2624
Autor:
Tedesco, Joseph L., VanMil, Brenda L., Myers-Ward, Rachael L., Culbertson, James C., Jernigan, Glenn G., Campbell, Paul M., McCrate, Joseph M., Kitt, Stephen A., Eddy, Jr., Charles R., Gaskill, D. Kurt
Publikováno v:
ECS Trans. 19, 137 (2009)
Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and
Externí odkaz:
http://arxiv.org/abs/0907.5029
Autor:
Tedesco, Joseph L., VanMil, Brenda L., Myers-Ward, Rachael L., McCrate, Joseph M., Kitt, Stephen A., Campbell, Paul M., Jernigan, Glenn G., Culbertson, James C., Eddy, Jr., Charles R., Gaskill, D. Kurt
Publikováno v:
Appl. Phys. Lett 95, 122102 (2009)
Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the grow
Externí odkaz:
http://arxiv.org/abs/0907.5026