Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Cuerdo Bragado, Roberto"'
Autor:
Romero Rojo, Fátima, Uren, M., Jiménez, A., Dua, C., Tadjer, Marko Jak, Cuerdo Bragado, Roberto, Calle Gómez, Fernando, Muñoz Merino, Elias
Publikováno v:
proceedings of 9th International Conference on Nitride Semiconductors | 9th International Conference on Nitride Semiconductors | 10/07/2011-15/07/2011 | Glasgow, UK
Archivo Digital UPM
instname
Archivo Digital UPM
instname
AlGaN/GaN high electron mobility transistors (HEMT) are key devices for the next generation of high-power, high-frequency and high-temperature electronics applications. Although significant progress has been recently achieved [1], stability and relia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::32273f1b3139b5e8e57ceffba74fc0f7
http://oa.upm.es/12930/
http://oa.upm.es/12930/
Autor:
Martin Horcajo, Sara, Tadjer, Marko Jak, Romero Rojo, Fátima, Cuerdo Bragado, Roberto, Calle Gómez, Fernando
Publikováno v:
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 | 8th Spanish Conference on Electron Devices, CDE'2011 | 08/02/2011-11/02/2011 | Palma de Mallorca, España
Archivo Digital UPM
instname
Archivo Digital UPM
instname
Enhancement-mode (E-mode) high electron mobility transistors (HEMTs) based on a standard AlGaN/GaN heterostructure have been fabricated using two different methods: 19F implantation and fluorine-based plasma treatment. The need of a thermal annealing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::6469d6ecfa165d41922d2bed8ac36c14
https://oa.upm.es/12913/
https://oa.upm.es/12913/
Autor:
Martin Horcajo, Sara, Tadjer, Marko Jak, Di Forte Poisson, M-A., Sarazin, N., Morvan, E., Dua, C., Cuerdo Bragado, Roberto, Calle Gómez, Fernando
Publikováno v:
9th International Conference on Nitride Semiconductors | 9th International Conference on Nitride Semiconductors | 10/07/2012-15/07/2012 | Glasgow (UK)
Archivo Digital UPM
Universidad Politécnica de Madrid
Archivo Digital UPM
Universidad Politécnica de Madrid
The AlGaN/GaN high-electron mobility transistors (HEMTs) have been considered as promising candidates for the next generation of high temperature, high frequency, high-power devices. The potential of GaN-based HEMTs may be improved using an AlInN bar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f125b1d5c78c816838d0a9afde46638a
https://oa.upm.es/13578/
https://oa.upm.es/13578/
Autor:
Cuerdo Bragado, Roberto, Pei, Y., Recht, F., Fichtenbaum, N., Keller, S., DenBaars, S.P., Calle Gómez, Fernando, Mishra, U.K.
Publikováno v:
Physica Status Solidi C, ISSN 0370-1972, 2008-07, Vol. 5, No. 9
Archivo Digital UPM
Universidad Politécnica de Madrid
Archivo Digital UPM
Universidad Politécnica de Madrid
A study of the low temperature DC and RF performance of deep submicron AlGaN/GaN high electron mobility transistors (HEMTs) is reported. From 300 K to 100 K both extrinsic transconductance and drain current increase by 30%, mainly due to the lowering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c9eaaf8d80601e59fef8d3e808265d2d
http://oa.upm.es/2565/
http://oa.upm.es/2565/
Autor:
Cuerdo Bragado, Roberto, Sillero Herrero, Eugenio, Romero Rojo, Fátima, Uren, M., Muñoz Merino, Elias, Calle Gómez, Fernando
Publikováno v:
Proceedings of the 5th International Workshop on Nitride semiconductors (IWN2008) | The 5th International Workshop on Nitride semiconductors (IWN2008) | 06/10/2008-10/10/2008 | Montreaux (Suiza)
Archivo Digital UPM
instname
Archivo Digital UPM
instname
GaN-based transistors have demonstrated to be the most promising candidates for applications with high power and high frequency requirements, and working in harsh environments. They take advantage of some interesting properties of nitrides such as th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b4d4909169f29e4b87d88738cda590ed
https://oa.upm.es/3876/
https://oa.upm.es/3876/