Zobrazeno 1 - 10
of 785
pro vyhledávání: '"Cucciarelli, S"'
Autor:
Allkofer, Y., Amsler, C., Bortoletto, D., Chiochia, V., Cremaldi, L., Cucciarelli, S., Dorokhov, A., Hoermann, C., Horisberger, R., Kim, D., Konecki, M., Kotlinski, D., Prokofiev, K., Regenfus, C., Rohe, T., Sanders, D. A., Son, S., Swartz, M., Speer, T.
Publikováno v:
Nucl.Instrum.Meth.A584:25-41,2008
The CMS experiment at the LHC includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with 100X150 um^2 cell size processed on diffusion oxygenate
Externí odkaz:
http://arxiv.org/abs/physics/0702092
Autor:
Swartz, M., Chiochia, V., Allkofer, Y., Amsler, C., Bortoletto, D., Cremaldi, L., Cucciarelli, S., Dorokhov, A., Hoermann, C., Kim, D., Konecki, M., Kotlinski, D., Prokofiev, K., Regenfus, C., Rohe, T., Sanders, D. A., Son, S., Speer, T.
Publikováno v:
ECONF C0604032:0014,2006
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap
Externí odkaz:
http://arxiv.org/abs/physics/0605215
Autor:
Buttar, C., Dittmaier, S., Drollinger, V., Frixione, S., Nikitenko, A., Abdullin, S. Willenbrock S., Accomando, E., Acosta, D., Arbuzov, A., Ball, R. D., Ballestrero, A., Bartalini, P., Baur, U., Belhouari, A., Belov, S., Belyaev, A., Benedetti, D., Binoth, T., Bolognesi, S., Bondarenko, S., Boos, E. E., Boudjema, F., Bredenstein, A., Bunichev, V. E., Campbell, J. M., Calame, C. Carloni, Catani, S., Cavanaugh, R., Ciccolini, M., Collins, J., Cooper-Sarkar, A. M., Corcella, G., Cucciarelli, S., Davatz, G., DelDuca, V., Denner, A., D'Hondt, J., Drozdetskiy, A., Dudko, L. V., Duehrssen, M., Frazier, R., Fujimoto, J., Gascon-Shotkin, S., Gehrmann, T., Ridder, A. Gehrmann-De, Giammanco, A., Giolo-Nicollerat, A. -S., Glover, E. W. N., Godbole, R. M., Grau, A., Grazzini, M., Guillet, J. -Ph., Gusev, A., Harlander, R., Hegde, R., Heinrich, G., Heyninck, J., Huston, J., Ishikawa, T., Kalinowski, A., Kaneko, T., Kato, K., Kauer, N., Kilgore, W., Kirsanov, M., Korytov, A., Kraemer, M., Kulesza, A., Kurihara, Y., Lehti, S., Magnea, L., Mahmoudi, F., Maina, E., Maltoni, F., Mariotti, C., Mellado, B., Mercier, D., Mitselmakher, G., Montagna, G., Moraes, A., Moretti, M., Moretti, S., Nakano, I., Nason, P., Nicrosini, O., Nolten, M. R., Olness, F., Pakhotin, Yu., Pancheri, G., Piccinini, F., Pilon, E., Pittau, R., Pozzorini, S., Pumplin, J., Quayle, W., Ross, D. A., Sadykov, R., Sandhoff, M., Savrin, V. I., Schmidt, A., Schulze, M., Schumann, S., Scurlock, B., Sherstnev, A., Skands, P., Somogyi, G., Smith, J., Spira, M., Srivastava, Y., Stenzel, H., Sumino, Y., Tanaka, R., Trocsanyi, Z., Tsuno, S., Vicini, A., Wackeroth, D., Weber, M. M., Weiser, C., Willenbrock, S., Wu, S. L., Zanetti, M.
This Report summarises the activities of the "SM and Higgs" working group for the Workshop "Physics at TeV Colliders", Les Houches, France, 2-20 May, 2005. On the one hand, we performed a variety of experimental and theoretical studies on standard ca
Externí odkaz:
http://arxiv.org/abs/hep-ph/0604120
Autor:
Swartz, M., Chiochia, V., Allkofer, Y., Bortoletto, D., Cremaldi, L., Cucciarelli, S., Dorokhov, A., Hoermann, C., Kim, D., Konecki, M., Kotlinski, D., Prokofiev, K., Regenfus, C., Rohe, T., Sanders, D. A., Son, S., Speer, T.
Publikováno v:
Nucl.Instrum.Meth. A565 (2006) 212-220
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap
Externí odkaz:
http://arxiv.org/abs/physics/0510040
Autor:
Chiochia, V., Swartz, M., Allkofer, Y., Bortoletto, D., Cremaldi, L., Cucciarelli, S., Dorokhov, A., Hoermann, C., Kim, D., Konecki, M., Kotlinski, D., Prokofiev, K., Regenfus, C., Rohe, T., Sanders, D. A., Son, S., Speer, T.
Publikováno v:
Nucl.Instrum.Meth.A568:51-55,2006
In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge
Externí odkaz:
http://arxiv.org/abs/physics/0506228
Autor:
Dorokhov, A., Allkofer, Y., Amsler, C., Bortoletto, D., Chiochia, V., Cremaldi, L., Cucciarelli, S., Hoermann, C., Kim, D., Konecki, M., Kotlinski, D., Prokofiev, K., Regenfus, C., Rohe, T., Sanders, D., Son, S., Speer, T., Swartz, M.
Publikováno v:
Nucl.Instrum.Meth.A560:112-117,2006
A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements we
Externí odkaz:
http://arxiv.org/abs/physics/0412036
Autor:
Rohe, T., Bortoletto, D., Chiochia, V., Cremaldi, L. M., Cucciarelli, S., Dorokhov, A., Hoermann, C., Kim, D., Konecki, M., Kotlinski, D., Prokofiev, K., Regenfus, C., Sanders, D. A., Son, S., Speer, T., Swartz, M.
Publikováno v:
Nucl.Instrum.Meth.A552:232-238,2005
The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the pixel are
Externí odkaz:
http://arxiv.org/abs/physics/0411214
Autor:
Swartz, M., Bortoletto, D., Chiochia, V., Cremaldi, L., Cucciarelli, S., Dorokhov, A., Konecki, M., Prokofiev, K., Regenfus, C., Rohe, T., Sanders, D. A., Son, S., Speer, T.
Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge tran
Externí odkaz:
http://arxiv.org/abs/physics/0409049
Autor:
Rohe, T., Bortoletto, D., Chiochia, V., Cremaldi, L. M., Cucciarelli, S., Dorokhov, A., Konecki, M., Prokofiev, K., Regenfus, C., Sanders, D. A., Son, S., Speer, T., Swartz, M.
Publikováno v:
IEEE Trans.Nucl.Sci.51:1150-1157,2004
This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirr
Externí odkaz:
http://arxiv.org/abs/physics/0312009
Autor:
Dorokhov, A., Amsler, C., Bortoletto, D., Chiochia, V., Cremaldi, L., Cucciarelli, S., Konecki, M., Prokofiev, K., Regenfus, C., Rohe, T., Sanders, D., Son, S., Speer, T., Swartz, M.
Publikováno v:
Nucl.Instrum.Meth.A530:71-76,2004
The tracking system of the CMS experiment, currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland), will include a silicon pixel detector providing three spacial measurements in its final configuration for tracks
Externí odkaz:
http://arxiv.org/abs/physics/0311050