Výsledky vyhledávání - "Crystalline silicons"

Atomic-Layer-Deposited Al2O3 as Effective Barrier against the Diffusion of Hydrogen from SiNx:H Layers into Crystalline Silicon during Rapid Thermal Annealing

Autor: Helmich, Lailah, Walter, Dominic C., Bredemeier, Dennis, Schmidt, Jan

Publikováno v: Physica Status Solidi-Rapid Research Letters 14 (2020), Nr. 12
Physica Status Solidi-Rapid Research Letters

Stacks of hydrogen-lean aluminum oxide, deposited via plasma-assisted atomic-layer-deposition, and hydrogen-rich plasma-enhanced chemical vapor-deposited silicon nitride (SiNx) are applied to boron-doped float-zone silicon wafers. A rapid thermal ann

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Demonstrating the high Voc potential of PEDOT:PSS/c-Si heterojunctions on solar cells

Autor: Jan Schmidt, Antoine Descoeudres, Matthieu Despeisse, Dimitri Zielke, Ralf Gogolin, Christophe Ballif

Publikováno v: Energy Procedia 124 (2017)

In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high Voc value of 688 mV after full-area metallization of the PEDOT:PSS. We achieve this by combi

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https://doi.org/10.1016/j.egypro.2017.09.295

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Parasitic Absorption in Polycrystalline Si-layers for Carrier-selective Front Junctions

Autor: Rolf Reineke-Koch, Rolf Brendel, Mircea Turcu, Jan-Dirk Kähler, Jan Krügener, Robby Peibst, Tobias Wietler, Uwe Hohne, Sina Reiter, Nico Koper, D. Tetzlaff, Yevgeniya Larionova

Publikováno v: Energy Procedia 92 (2016)

We investigate the optical properties of n- and p-type polycrystalline silicon (poly-Si) layers. We determine the optical constants n and k of the complex refractive index of polycrystalline silicon by using variable-angle spectroscopic ellipsometry.

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Results of the round robin calibration of reference solar cells within the PhotoClass project

Autor: Elena Salis, Karsten Bothe, Ralph Gottschalg, Martin Bliss, Thomas R. Betts, Jochen Hohl-Ebinger, Werner Herrmann, Lorentz Rimmelspacher, Gabi Friesen, David Hinken, D. Friedrich, Diego Pavanello, S. Winter, I. Kröger, Jimmy Dubard, Sebastian Dittmann, Harald Müllejans, Johannes Stang

Publikováno v: International Journal of Metrology and Quality Engineering, Vol 9, p 8 (2018)
International Journal of Metrology and Quality Engineering 9 (2018)

An intercomparison of terrestrial photovoltaic (PV) calibrations was performed among a number of European calibration and testing laboratories that participated in the European Metrology Research Program (EMRP) project “PhotoClass”. The purpose o

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Kerfless exfoliated thin crystalline Si wafers with Al metallization layers for solar cells

Autor: Sarah Kajari-Schöder, Raphael Niepelt, Jan Hensen, Verena Steckenreiter, Rolf Brendel

Publikováno v: Journal of Materials Research 30 (2015), Nr. 21

We report on a kerfless exfoliation approach to further reduce the costs of crystalline silicon photovoltaics making use of evaporated Al as a double functional layer. The Al serves as the stress inducing element to drive the exfoliation process and

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https://doi.org/10.1557/jmr.2015.309

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Experimental Determination of the Uncertainty of the Absorption Coefficient of Crystalline Silicon

Autor: P. Christian Peest, Malte R. Vogt, I. Kröger, Rolf Brendel, Siew Yee Lim, Hieu T. Nguyen, Karsten Bothe, Daniel Macdonald, Jan Schmidt, Carsten Schinke, S. Winter, Alfred Schirmacher

Publikováno v: Energy Procedia 77 (2015)
Energy Procedia

Based on a combined analysis of spectroscopic ellipsometry, reflectance and transmittance measurements as well as spectrally resolved luminescence measurements and spectral responsivity measurements, we present data of the coefficient of band-to-band

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Two-stage permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon

Autor: Dominic C. Walter, Verena Steckenreiter, Jan Schmidt

Publikováno v: Energy Procedia 124 (2017)

We analyze the lifetime evolution during permanent deactivation of the boron-oxygen-related defect center (BO defect) in boron-doped, oxygen-rich Czochralski-grown silicon (Cz-Si). In particular, we examine the impact of the samples’ states prior t

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Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity

Autor: Steckenreiter, Verena, Walter, Dominic C., Schmidt, Jan

Publikováno v: AIP Advances 7 (2017), Nr. 3
AIP Advances, Vol 7, Iss 3, Pp 035305-035305-6 (2017)

Based on contactless carrier lifetime measurements performed on p-type boron-doped Czochralski-grown silicon (Cz-Si) wafers, we examine the rate constant Rde of the permanent deactivation process of the boron-oxygen-related defect center as a functio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ee498f5d2cecd3005de4257aacfd740
http://www.repo.uni-hannover.de/handle/123456789/1289

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