Zobrazeno 1 - 10
of 507
pro vyhledávání: '"Cryogenic electronics"'
Autor:
Pengcheng Ma, Kaveh Delfanazari, Reuben K. Puddy, Jiahui Li, Moda Cao, Teng Yi, Jonathan P. Griffiths, Harvey E. Beere, David A. Ritchie, Michael J. Kelly, Charles G. Smith
Publikováno v:
Chip, Vol 3, Iss 3, Pp 100095- (2024)
The mass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator. It is, therefore, beneficial to contrast t
Externí odkaz:
https://doaj.org/article/140581418be846f29ff5c164d9908800
Autor:
Mathieu de Kruijf, Grayson M. Noah, Alberto Gomez-Saiz, John J.L. Morton, M. Fernando Gonzalez-Zalba
Publikováno v:
Chip, Vol 3, Iss 3, Pp 100097- (2024)
Silicon technology offers the enticing opportunity for monolithic integration of quantum and classical electronic circuits. However, the power consumption levels of classical electronics may compromise the local chip temperature and hence affect the
Externí odkaz:
https://doaj.org/article/d78de5fe4dfa4a3b97b8fb297e72f6e3
Publikováno v:
Electronics Letters, Vol 60, Iss 13, Pp n/a-n/a (2024)
Abstract A graphene field‐effect transistor (GFET) based on chemical vapour deposited (CVD) Ge‐based graphene was reported and the low‐temperature electrical characteristics primarily investigated. The self‐alignment technique was used to fab
Externí odkaz:
https://doaj.org/article/2f85c9d492d14572bc18c7e49ad85bc1
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 573-580 (2024)
This paper presents an extensive characterization of the low-frequency noise (LFN) at room temperature (RT) and cryogenic temperature (4.2K) of 40-nm bulk-CMOS transistors. The noise is measured over a wide range of bias conditions and geometries to
Externí odkaz:
https://doaj.org/article/b4fd5fdbd1fb42b08a36c5ff6d9b2f2e
Autor:
Alberto Gatti, Filip Tavernier
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 369-378 (2024)
This paper presents the cryogenic characterization and compact modeling of thin-oxide MOSFETs in a standard 65-nm Si-bulk CMOS technology. The influence of both short and narrow channel effects at extremely low temperature on key device parameters su
Externí odkaz:
https://doaj.org/article/a79730c89f3b42a7af4717ceb68807bb
Autor:
Soumak Nandi, Shashank Kumar Dubey, Mukesh Kumar, Amit Krishna Dwivedi, Manisha Guduri, Aminul Islam
Publikováno v:
IEEE Access, Vol 11, Pp 133115-133130 (2023)
This work proposes a 100 nm metamorphic InP HEMT with an InAs channel inset for cryogenic environment millimetre wave applications. The usage of an ultra-thin 2 nm barrier layer, unique composite channel topology and III-V material selection provides
Externí odkaz:
https://doaj.org/article/8b8a83d9c2cd44b994077c441fa70286
Autor:
Zhidong Tang, Zewei Wang, Ao Guo, Linlin Liu, Chengwei Cao, Xin Luo, Weican Wu, Yingjia Guo, Zhenghang Zhi, Yongqi Hu, Yongfeng Cao, Ganbing Shang, Liujiang Yu, Shaojian Hu, Shoumian Chen, Yuhang Zhao, Xufeng Kou
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 532-539 (2022)
This paper presents experimental RF characterizations and modeling on the nano-scale multi-finger gate MOSFETs of the HLMC 40 nm low-power CMOS technology. Both the resistive and capacitive components in the equivalent circuit model for the RF MOSFET
Externí odkaz:
https://doaj.org/article/64806c3822b04a9f86c3c7a26f70b54c
Publikováno v:
IEEE Transactions on Quantum Engineering, Vol 3, Pp 1-19 (2022)
Quantum error correction (QEC) is required in quantum computers to mitigate the effect of errors on physical qubits. When adopting a QEC scheme based on surface codes, error decoding is the most computationally expensive task in the classical electro
Externí odkaz:
https://doaj.org/article/5144fcbcf54241f39c8f1a19ededf02b
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Akademický článek
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