Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Croxall, A. F."'
Autor:
Shetty, A., Sfigakis, F., Mak, W. Y., Gupta, K. Das, Buonacorsi, B., Tam, M. C., Kim, H. S., Farrer, I., Croxall, A. F., Beere, H. E., Hamilton, A. R., Pepper, M., Austing, D. G., Studenikin, S. A., Sachrajda, A., Reimer, M. E., Wasilewski, Z. R., Ritchie, D. A., Baugh, J.
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs loc
Externí odkaz:
http://arxiv.org/abs/2012.14370
Autor:
Saberi-Pouya, Samira, Conti, Sara, Perali, Andrea, Croxall, Andrew F., Hamilton, Alexander R., Peeters, Francois M., Neilson, David
Publikováno v:
Phys. Rev. B 101, 140501 (2020)
The experimental parameter ranges needed to generate superfluidity in optical and drag experiments in GaAs double quantum wells are determined, using a formalism that includes self-consistent screening of the Coulomb pairing interaction in the presen
Externí odkaz:
http://arxiv.org/abs/1910.06631
Publikováno v:
Phys. Rev. B 99, 195420 (2019)
We present observations of an anisotropic resistance state at Landau level filling factor $\nu=5/2$ in a two-dimensional hole system (2DHS), which occurs for certain values of hole density $p$ and average out-of-plane electric field $E_\perp$. The 2D
Externí odkaz:
http://arxiv.org/abs/1903.03039
Autor:
de Cumis, Ugo Siciliani, Waldie, Joanna, Croxall, Andrew F., Taneja, Deepyanti, Llandro, Justin, Farrer, Ian, Beere, Harvey E., Ritchie, David A.
We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow as 5 nm or 7.5 nm. With such narrow barriers, in the h-h configuration we observe signs o
Externí odkaz:
http://arxiv.org/abs/1611.08816
Autor:
Zheng, B., Croxall, A. F., Waldie, J., Gupta, K. Das, Sfigakis, F., Farrer, I., Beere, H. E., Ritchie, D. A.
We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells.
Externí odkaz:
http://arxiv.org/abs/1511.08701
Autor:
Gupta, K. Das, Croxall, A. F., Mak, W. Y., Beere, H. E., Nicoll, C. A., Farrer, I., Sfigakis, F., Ritchie, D. A.
Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high densities. A
Externí odkaz:
http://arxiv.org/abs/1111.4310
Autor:
Croxall, A. F., Gupta, K. Das, Nicoll, C. A., Beere, H. E., Farrer, I., Ritchie, D. A., Pepper, M.
Publikováno v:
PRB 80, 125323 (2009)
We report single layer resistivities of 2-dimensional electron and hole gases in an electron-hole bilayer with a 10nm barrier. In a regime where the interlayer interaction is stronger than the intralayer interaction, we find that an insulating state
Externí odkaz:
http://arxiv.org/abs/0812.3319
Autor:
Croxall, A. F., Gupta, K. Das, Nicoll, C. A., Thangaraj, M., Beere, H. E., Farrer, I., Ritchie, D. A., Pepper, M.
Publikováno v:
PRL 101, 246801 (2008)
We report Coulomb drag measurements on GaAs-AlGaAs electron-hole bilayers. The two layers are separated by a 10 or 25nm barrier. Below T$\approx$1K we find two features that a Fermi-liquid picture cannot explain. First, the drag on the hole layer sho
Externí odkaz:
http://arxiv.org/abs/0807.0134
Autor:
Croxall, A. F., Gupta, K. Das, Nicoll, C. A., Thangaraj, M., Farrer, I., Ritchie, D. A., Pepper, M.
We report our work on fabricating lithographically aligned patterned backgates on thin (50-60$\mu$m) \Roman{roman3}-\Roman{roman5} semiconductor samples using {\it single sided mask aligners only}. Along with this we also present a way to photograph
Externí odkaz:
http://arxiv.org/abs/0807.0117
Autor:
Shetty, A., Sfigakis, F., Mak, W. Y., Das Gupta, K., Buonacorsi, B., Tam, M. C., Kim, H. S., Farrer, I., Croxall, A. F., Beere, H. E., Hamilton, A. R., Pepper, M., Austing, D. G., Studenikin, S. A., Sachrajda, A., Reimer, M. E., Wasilewski, Z. R., Ritchie, D. A., Baugh, J.
Publikováno v:
Physical Review B. 105
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs loc