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pro vyhledávání: '"Crow, G. C."'
Autor:
Crow, G. C.
Two properties of holes in InGaAs quantum wells have been investigated and are reported in the thesis - their in-plane mobility at low electric fields, and their capture by a potential well. Monte Carlo simulations of hole transport in InGaAs-AlGaAs
Externí odkaz:
http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.384938
Autor:
Crow, G. C., Abram, R. A.
Publikováno v:
Journal of Applied Physics; 1/15/1999, Vol. 85 Issue 2, p1196, 7p, 1 Diagram, 9 Graphs
Publikováno v:
IEEE Transactions on Electron Devices; Oct2005, Vol. 52 Issue 10, p2175-2181, 7p
Publikováno v:
IEEE Transactions on Electron Devices; Jun2005, Vol. 52 Issue 6, p1072-1078, 7p
Autor:
Crow, G C, Abram, R A
Publikováno v:
Semiconductor Science & Technology; 2001, Vol. 16 Issue 4, p250-254, 5p
Autor:
Crow, G C, Abram, R A
Publikováno v:
Semiconductor Science & Technology; 1999, Vol. 14 Issue 1, p1-11, 11p
Autor:
Herbert, D. C., Uren, M. J., Hughes, B. T., Hayes, D. G., Birbeck, J. C. H., Balmer, R., Martin, T., Crow, G. C., Abram, R. A., Walmsley, M., Davies, R. A., Wallis, R. H., Phillips, W. A., Jones, S.
Publikováno v:
Journal of Physics: Condensed Matter; 4/8/2002, Vol. 14 Issue 13, p1-1, 1p
Publikováno v:
Semiconductor Science & Technology; Jul2000, Vol. 15 Issue 7, p1-1, 1p
Autor:
Crow, G. C., Abram, R. A.
Publikováno v:
Semiconductor Science & Technology; Jan2000, Vol. 15 Issue 1, p1-1, 1p
Autor:
Crow, G. C., Abram, R. A.
Publikováno v:
Semiconductor Science & Technology; Dec1999, Vol. 14 Issue 12, p1-1, 1p