Zobrazeno 1 - 10
of 103
pro vyhledávání: '"Crouch, Roger"'
Autor:
Crouch, Roger Keith
When beryllium is thermally diffused into silicon, it gives rise to acceptor levels 191 meV and 145 meV above the valence band. Quenching and annealing studies indicate that the 145 meV level is due to a more complex beryllium configuration than the
Externí odkaz:
http://hdl.handle.net/10919/91027
Publikováno v:
In Optics and Lasers in Engineering November 2019 122:151-163
Publikováno v:
In Engineering Applications of Artificial Intelligence November 2015 46 Part B:336-345
Publikováno v:
In Safety Science December 2014 70:80-88
Autor:
Coombs, William M., Crouch, Roger S.
Publikováno v:
In Computer Methods in Applied Mechanics and Engineering 2011 200(25):2297-2318
Autor:
Coombs, William M., Crouch, Roger S.
Publikováno v:
In Computer Methods in Applied Mechanics and Engineering 2011 200(9):1021-1037
Autor:
Chui, Jeanie, Coroneo, Minas T., Tat, Lien T., Crouch, Roger, Wakefield, Denis, Di Girolamo, Nick
Publikováno v:
In The American Journal of Pathology 2011 178(2):817-827
Autor:
Crouch, Roger Keith
The ionization energy of lithium as an impurity in single-crystal silicon has recently been determined by optical means to be dependent upon the amount of oxygen in the silicon. It was found that for float-zone crystals, having a relatively low oxyge
Externí odkaz:
http://hdl.handle.net/10919/71203
Publikováno v:
In Computer Methods in Applied Mechanics and Engineering 2010 199(25):1733-1743