Zobrazeno 1 - 10
of 205
pro vyhledávání: '"Crosstalk suppression"'
Publikováno v:
Sensors, Vol 24, Iss 19, p 6403 (2024)
An all-optical crosstalk suppression scheme is desirable for wavelength and space division multiplexing optical networks by improving the performance of the corresponding nodes. We put forward a scheme comprising double-stage semiconductor optical am
Externí odkaz:
https://doaj.org/article/0b86a917e3e4447b9bfda27e720f91dd
Publikováno v:
Sensors, Vol 24, Iss 15, p 4847 (2024)
Synchronous monitoring electroencephalogram (EEG) and functional near-infrared spectroscopy (fNIRS) have received significant attention in brain science research for their provision of more information on neuro-loop interactions. There is a need for
Externí odkaz:
https://doaj.org/article/a1930478910049a4b29d7a090d58bdb1
Publikováno v:
Energy Reports, Vol 9, Iss , Pp 837-846 (2023)
Because of the benefits of lower on-state resistance, higher operating voltage, and higher switching frequency, SiC-MOSFET has gradually become an ideal choice for the development of power converters operating in high voltage, temperature, and power
Externí odkaz:
https://doaj.org/article/f0b307f539644eb7a19538d280ed9ee8
Publikováno v:
IEEE Access, Vol 11, Pp 91247-91259 (2023)
Crosstalk in a phase-leg configuration significantly limits the high switching performance of silicon carbide (SiC) MOSFETs and results in additional switching loss, self-excited oscillation and even parasitic conduction. To give full play to the fas
Externí odkaz:
https://doaj.org/article/27112a0462c146aba561d8e61efb7580
Autor:
Ruiting Cheng, Yu Yang, Jiarui Zhang, Mingqing Zuo, Shuailuo Huang, Yuyang Gao, Zhangyuan Chen, Yongqi He, Juhao Li
Publikováno v:
IEEE Photonics Journal, Vol 15, Iss 4, Pp 1-6 (2023)
Recently, weakly-coupled mode-division multiplexing (MDM) technology based on few-mode fibers (FMFs) has been widely investigated as a promising candidate for capacity enhancement of various applications such as optical interconnections. However, non
Externí odkaz:
https://doaj.org/article/b589dc9cd9c34054a6767619a0bb786a
Autor:
Jian Li, Yiming Liu, Mengge Wu, Kuanming Yao, Zhan Gao, Yuyu Gao, Xingcan Huang, Tsz Hung Wong, Jingkun Zhou, Dengfeng Li, Hu Li, Jiyu Li, Ya Huang, Rui Shi, Junsheng Yu, Xinge Yu
Publikováno v:
Fundamental Research, Vol 3, Iss 1, Pp 111-117 (2023)
With the requirements of self-powering sensors in flexible electronics, wearable triboelectric nanogenerators (TENGs) have attracted great attention due to their advantages of excellent electrical outputs and low-cost processing routes. The crosstalk
Externí odkaz:
https://doaj.org/article/c36da579563b40808a0b890d201717ce
Publikováno v:
Energy Reports, Vol 8, Iss , Pp 780-788 (2022)
The high switching speed of GaN HEMT will cause serious crosstalk in the phase-leg configuration. The negative turn-off driving voltage is usually recommended to avoid the parasitic shoot-through. However, the adoption of negative turn-off voltage wi
Externí odkaz:
https://doaj.org/article/18458199996841069d2defcde8a4f55e
Akademický článek
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Autor:
Pei Hang He, Ling Yun Niu, Yi Fan, Hao Chi Zhang, Le Peng Zhang, Dayue Yao, Wen Xuan Tang, Tie Jun Cui
Publikováno v:
Opto-Electronic Advances, Vol 5, Iss 8, Pp 1-10 (2022)
Although tremendous efforts have been devoted to investigating planar single-conductor circuits, it remains challenging to provide tight confinement of electromagnetic field and compatibility with active semi-conductor components such as amplifier, h
Externí odkaz:
https://doaj.org/article/4397b8c3e56a415196da7294ef46cc31
Publikováno v:
Energy Reports, Vol 8, Iss , Pp 908-919 (2022)
Affected by high switching speed and parasitic parameters, crosstalk problem of eGaN HEMT in a phase-leg configuration cannot be ignored. By decreasing gate driver turn-off voltage, the false turn-on phenomenon of device caused by crosstalk can be av
Externí odkaz:
https://doaj.org/article/cc351c40598040ecacea192996d68593