Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Cros, Antoine"'
Autor:
Shin, Minju, Shi, Ming, Mouis, Mireille, Cros, Antoine, Josse, Emmanuel, Kim, Gyu-Tae, Ghibaudo, Gérard
Publikováno v:
In Solid State Electronics October 2015 112:13-18
Autor:
Shin, Minju, Shi, Ming, Mouis, Mireille, Cros, Antoine, Josse, Emmanuel, Kim, Gyu-Tae, Ghibaudo, Gérard
Publikováno v:
In Solid State Electronics June 2015 108:30-35
Autor:
Shin, Minju, Shi, Ming, Mouis, Mireille, Cros, Antoine, Josse, Emmanuel, Mukhopadhyay, Sutirha, Piot, Benjamin, Kim, Gyu-Tae, Ghibaudo, Gérard
Publikováno v:
In Solid State Electronics January 2015 103:229-235
Autor:
Ben Akkez, Imed, Fenouillet-Beranger, Claire, Cros, Antoine, Perreau, Pierre, Haendler, Sébatien, Weber, Olivier, Andrieu, François, Pellissier-Tanon, D., Abbate, F., Richard, C., Beneyton, R., Gouraud, P., Margain, A., Borowiak, C., Gourvest, E., Bourdelle, K.K., Nguyen, B.Y., Poiroux, T., Skotnicki, Thomas, Faynot, Olivier, Balestra, Francis, Ghibaudo, Gérard, Boeuf, Fréderic
Publikováno v:
In Solid State Electronics December 2013 90:143-148
Autor:
Rahhal, Lama, Bajolet, Aurélie, Cros, Antoine, Diouf, Cheikh, Kergomard, Flore, Rosa, Julien, Bidal, Gregory, Bianchi, Raul-Andres, Ghibaudo, Gérard
Publikováno v:
In Solid State Electronics July 2013 85:15-22
Autor:
Ben Akkez, Imed, Cros, Antoine, Fenouillet-Beranger, Claire, Boeuf, Frederic, Rafhay, Q., Balestra, Francis, Ghibaudo, Gérard
Publikováno v:
In Solid State Electronics June 2013 84:142-146
Autor:
Ben Akkez, Imed, Cros, Antoine, Fenouillet-Beranger, Claire, Perreau, P., Margain, A., Boeuf, Frederic, Balestra, Francis, Ghibaudo, Gérard
Publikováno v:
In Solid State Electronics May 2012 71:53-57
Autor:
Cros, Antoine.
Thèse--Paris.
Externí odkaz:
http://catalog.hathitrust.org/api/volumes/oclc/67906830.html
http://books.google.com/books?id=9VvPAAAAMAAJ
http://books.google.com/books?id=9VvPAAAAMAAJ
Autor:
Cros, Antoine.
Th.--Méd.--Paris, 1857.
Voyez tome 4 N ° 181 Paris, 1857.
Voyez tome 4 N ° 181 Paris, 1857.
Externí odkaz:
http://catalogue.bnf.fr/ark:/12148/cb368698811
Publikováno v:
In Solid State Electronics 2009 53(2):127-133