Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Cristine Jin Estrada"'
Autor:
Annan Xiong, Shunqi Dai, Cristine Jin Estrada, Zhirong Peng, Chen Xu, Jie George Yuan, Mansun Chan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 624-630 (2023)
This paper presents a CMOS-compatible gate-assisted photonic demodulator with contrast enhancement (GAPD-CE) techniques. To form an asymmetric field inside the substrate that will facilitate the transfer of photogenerated electrons, p-well and channe
Externí odkaz:
https://doaj.org/article/f328a2e744034377b773fbe66259b14f
Publikováno v:
IEEE Transactions on Electron Devices. 70:2575-2580
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dc772bec0376d6938b2a571b4e42b17
https://doi.org/10.1109/ted.2023.3255833
https://doi.org/10.1109/ted.2023.3255833
Publikováno v:
IEEE Transactions on Electron Devices. 69:6178-6183
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ce2324bb7f5987d17d712b147c42bbf
https://doi.org/10.1109/ted.2022.3207708
https://doi.org/10.1109/ted.2022.3207708
Autor:
Shun-Qi Dai, Cristine Jin Estrada, Annan Xiong, Songcen Xu, Huanmei Yuan, Chen Xu, Jie George Yuan, Mansun Chan
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed75efec256beeeb2f30cb130b63ea5d
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134095
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134095
Autor:
Shun-Qi Dai, Cristine Jin Estrada, Annan Xiong, Huanmei Yuan, Songcen Xu, Chen Xu, Jie George Yuan, Mansun Chan
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9fcd9cb421573e10ab4353da7164e87
https://doi.org/10.1109/edtm55494.2023.10102945
https://doi.org/10.1109/edtm55494.2023.10102945
Design and demonstration of Cu/Al2O3 /Cu RRAM with complementary resistance switching characteristic
Autor:
Huanmei Yuan, Yang Char, Shunqi Dai, Cristine Jin Estrada, Yuqing Zhang, Annan Xiong, Hao Bai, Guangyu Du, Songhua Cai, Zhimin Li, Songcen Xu, Mansun Chan
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea7a4549b15c70f73a078993eed2881d
https://doi.org/10.1109/edtm55494.2023.10102970
https://doi.org/10.1109/edtm55494.2023.10102970
Publikováno v:
IEEE Electron Device Letters. 42:1890-1893
This paper demonstrates a complementary 2-D field-effect transistor (FET) technology with molybdenum disulfide (MoS2) as the active film, hexagonal boron nitride (hBN) as the gate dielectric, and graphene as the gate electrode. The active region of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12dcb31d902212bc634562bcebc92cdd
https://doi.org/10.1109/led.2021.3124823
https://doi.org/10.1109/led.2021.3124823
Publikováno v:
IEEE Transactions on Electron Devices. 67:2825-2830
This article presents a physical model of the current-assisted photonic demodulator (CAPD) for the time-of-flight (TOF) CMOS image sensor. An analytical expression relating the optical photogenerated current to the input bias and incident light inten
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d3bf2f95dc52c939b19be4a125b93ce
https://doi.org/10.1109/ted.2020.2995349
https://doi.org/10.1109/ted.2020.2995349
Publikováno v:
2021 IEEE 14th International Conference on ASIC (ASICON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b087cec7f6aaa43af3a9dcd6c6cc465
https://doi.org/10.1109/asicon52560.2021.9620308
https://doi.org/10.1109/asicon52560.2021.9620308
Publikováno v:
ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b68958a91e9f58a5ff4e077f1ac6f33
https://doi.org/10.1109/essderc53440.2021.9631795
https://doi.org/10.1109/essderc53440.2021.9631795