Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Cristiano F. Goncalves"'
Autor:
Cristiano F. Goncalves, Filipe M. Barradas, Luis C. Nunes, Pedro M. Cabral, Jose Carlos Pedro
Publikováno v:
IEEE Access, Vol 9, Pp 38757-38766 (2021)
This paper presents a compact solution for impedance calculation obtained from low phase resolution stationary wave measurements, for RF power systems operating in load varying scenarios. The implemented system is based on a bi-directional coupler an
Externí odkaz:
https://doaj.org/article/d2574da3489d4051bf7b00ecb0ba7fd6
Publikováno v:
IEEE Access, Vol 7, Pp 152576-152584 (2019)
In Fifth Generation (5G) Multiple-Input Multiple-Output (MIMO) transceivers, Power Amplifiers (PAs) driving antenna arrays experience varying loading conditions. In fact, the input impedance of each antenna element changes within a Smith chart region
Externí odkaz:
https://doaj.org/article/80c7634b7e4b427a996b52f6021bc5d5
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 70:779-789
This article presents a quasi-load insensitive (QLI) Doherty power amplifier (DPA). The proposed theory makes the amplifier load insensitive in terms of output power, while its efficiency is slightly degraded for complex loads. The load insensitivene
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 69:745-755
This article presents an automatic system that is able to dynamically restore the output power capability of a power amplifier (PA) under variable loading scenarios. This is accomplished by dynamically adapting the supply voltage, ${V_{\mathrm{ DD}}}
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 67:2465-2474
This paper provides theoretical and experimental evidence that, contrary to what is a widely reported belief, the capture time constant of GaN high-electron-mobility transistor (HEMTs) deep-level traps is not infinitesimally shorter than the modulati
Publikováno v:
2021 IEEE MTT-S International Microwave Symposium (IMS).
This paper presents optimal carrier and peaking drain voltages to preserve the output power capability and back-off level of Doherty power amplifiers (PAs) operating for non-optimal loads. These voltages are theoretically obtained from back-off and f
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
Power Amplifiers (PAs) are usually designed for fixed load terminations, which implies that their performance can be severely degraded for varying load operation. This paper presents a load dependent supply voltage ( $V_{\mathrm{DD}}$ ) adaptation th
Publikováno v:
2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC).
Deep-level traps’ capture and emission time constants are known to impact the GaN HEMT models' ability to reproduce the device behavior when subject to RF modulated signals. Since deep level traps' capture time constants are usually much shorter th
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
Power Amplifiers can either be designed directly from load-pull data or using CAD software with embedded nonlinear models. Both approaches have advantages and disadvantages and their own range of applicability. Availability of reliable transistor mod
Publikováno v:
International Journal of RF and Microwave Computer-Aided Engineering. 28:e21515