Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Cristian Boianceanu"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 169-179 (2022)
During development of power Integrated Circuits (IC), several iterations between the design and test/ measurement steps are performed. Computer-aided engineering significantly shortens the product development process because the numerical simulations
Externí odkaz:
https://doaj.org/article/806a0a9f41954f098e6a354124bc4f61
Publikováno v:
Sensors, Vol 22, Iss 19, p 7223 (2022)
Integrated power ICs acting as smart power switches for automotive or industrial applications are often subjected to active thermal cycling. Consequently, they undergo significant self-heating and are prone to various failure mechanisms related to th
Externí odkaz:
https://doaj.org/article/be16d5b7903048f0b1a775a6a563f2e3
Autor:
Mihaela Pantazica, Bogdan Mihailescu, Norocel Codreanu, Madalin Vasile Moise, Ciprian Ionescu, Cristian Boianceanu, Paul Svasta, Alexandru Vasile
Publikováno v:
2021 44th International Spring Seminar on Electronics Technology (ISSE)
The paper is a part of a larger study regarding reliability aspects of high power DMOS (Double-diffused MOS) transistors, as part of automotive integrated electronics. When submitted to high transient loads, the junction temperature of these devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6a3c02900aa537201b0af68f2471408
https://doi.org/10.1109/isse51996.2021.9467624
https://doi.org/10.1109/isse51996.2021.9467624
Autor:
Cristian Diaconu, Horia Cucu, Corneliu Burileanu, Georgian Nicolae, Andi Buzo, Georg Pelz, Cristian Boianceanu
Publikováno v:
2020 International Semiconductor Conference (CAS).
The solvers of the simulators with underlying stiff equations usually come with a large number of parameters that need to be tuned, also known as configuration settings. The developers of such simulators provide, in most of the cases, a default set o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7614b4314cb22ad31cf5da2af5f52806
https://doi.org/10.1109/cas50358.2020.9268036
https://doi.org/10.1109/cas50358.2020.9268036
Autor:
Adrian Bojita, Cristian Boianceanu, Marius Purcar, Dan Simon, Ciprian Florea, Cosmin-Sorin Plesa
Publikováno v:
Microelectronics Reliability. 87:142-150
The metallization of double-diffused metal-oxide semiconductor (DMOS) power devices, which operate under fast thermal cycling (FTC), undergoes thermal induced plastic metal deformation (TPMD). The design of the metallization has a significant impact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73ffc4e0d62a1a99a4f72e68eb4d5cbb
https://doi.org/10.1016/j.microrel.2018.06.013
https://doi.org/10.1016/j.microrel.2018.06.013
Publikováno v:
Microelectronics Reliability. 79:509-516
This paper presents a methodology for designing over-temperature and over-current protection (OTP and OCP) circuits for low drop-out voltage regulators (LDOs). The OTP monitors the die temperature developed within the LDO and disables its output stag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7669283df1ec80ca1694954fb7769cd
https://doi.org/10.1016/j.microrel.2017.03.028
https://doi.org/10.1016/j.microrel.2017.03.028
Publikováno v:
2019 25th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).
The temperature and stress distribution assessment inside the high-power Double-Diffused Metal Oxide Semiconductor (DMOS) transistors which operates under repetitive thermal cycles is required in order to design reliable devices. Prediction of such p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e084653af3e8ac7b5930bda238b3a72b
https://doi.org/10.1109/therminic.2019.8923502
https://doi.org/10.1109/therminic.2019.8923502
Publikováno v:
CISS
State estimation in the presence of non-Gaussian noise is discussed. Since the Kalman filter uses only second-order signal information, it is not optimal in non-Gaussian noise environments. The maximum correntropy criterion (MCC) is a new approach to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab12dfe7268def699d1b4c9c056d4ae8
https://doi.org/10.1109/tdmr.2016.2583663
https://doi.org/10.1109/tdmr.2016.2583663
Publikováno v:
2018 International Semiconductor Conference (CAS).
This paper presents an over-temperature protection (OTP) circuit for a DC-DC converter based on switching capacitors (SC DC-DC). The circuit was designed by using a two-step approach that encompasses running both electrical and electro-thermal simula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dff2dae9aa7eaa33db591f818a316ee
https://doi.org/10.1109/smicnd.2018.8539822
https://doi.org/10.1109/smicnd.2018.8539822
Publikováno v:
Proceedings of the 1st International Conference on Numerical Modelling in Engineering ISBN: 9789811322723
Thermal Induced Plastic Metal Deformation (TPMD) in a double-diffused metal-oxide semiconductor (DMOS) power device is highly dependent on the design and material properties of the metallization system corresponding to the technology in which the dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11c9a7b123295b7efdf6b8028c7a354d
https://doi.org/10.1007/978-981-13-2273-0_3
https://doi.org/10.1007/978-981-13-2273-0_3
