Characterization and Modeling of Oxide Chemical-Mechanical Polishing Using Planarization Length and Pattern Density Concepts.

Autor: Ouma, D. Okumu, Boning, Duane S., Chung, James E., Easter, William G., Saxena, Vivek, Misra, Sudhanshu, Crevasse, Annette

Publikováno v: IEEE Transactions on Semiconductor Manufacturing; May2002, Vol. 15 Issue 2, p232, 13p, 8 Black and White Photographs, 9 Diagrams, 5 Charts, 24 Graphs