Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Craig W. MacNaughton"'
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
In an effort to keep scaling at the speed of Moore's law, novel methods are being developed to facilitate advanced semiconductor manufacturing at the 32nm node and beyond. One such method for enabling the creation of dense pitches beyond the current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3103407691cd720c248985bbc32c970
https://doi.org/10.1117/12.814349
https://doi.org/10.1117/12.814349
Publikováno v:
SPIE Proceedings.
Overlay specifications are getting tighter and lithographic processes come close to their limits. Minimal process changes can lead occasionally to overlay excursions. We explore the use of advanced query and multivariate analysis techniques to addres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::067e952ba8a0c45ce12e6bc58d2983c9
https://doi.org/10.1117/12.483470
https://doi.org/10.1117/12.483470
Autor:
William T. Knose, Stephen Hsu, Noel Corcoran, Michael Richie, Srinivas Vedula, J. Fung Chen, Douglas Van Den Broeke, Craig W. MacNaughton, Xuelong Shi
Publikováno v:
SPIE Proceedings.
Chromeless Phase Lithography (CPL) with a high NA exposure tool is shown to be an attractive technology solution for the 65nm node. Under strong image enhancement conditions, the traditional definition of minimum defect printability specifications is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d443f7b7b5c79da76bc2717825e550c
https://doi.org/10.1117/12.476983
https://doi.org/10.1117/12.476983
Publikováno v:
SPIE Proceedings.
Optical proximity correction using both model-based and selective size adjust techniques was used as means to correct the distortion of patterns in silicon from drawn data. The performance of these corrections on silicon was evaluated using top-down
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6194d23af6d714395e4363ae3a37e62
https://doi.org/10.1117/12.473489
https://doi.org/10.1117/12.473489
Autor:
John L. Sturtevant, Mike Pochkowski, John Miller, Craig W. MacNaughton, Frank Santos, Chris A. Mack, Moshe E. Preil, John A. Allgair, Michelle Ivy, Kevin D. Lucas, John C. Robinson, Richard C. Elliott
Publikováno v:
SPIE Proceedings.
One-dimensional linewidth alone is an inadequate metric for low-k1 lithography. Critical Dimension metrology and analysis have historically focused on 1-dimensional effects but with low-k1 lithography is has increasingly been found that the process w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a734fe4197afda6bb96050de858600c1
https://doi.org/10.1117/12.436743
https://doi.org/10.1117/12.436743
Autor:
Herschel M. Marchman, Kevin M. Monahan, Jerry E. Schlesinger, Waiman Ng, Craig W. MacNaughton
Publikováno v:
SPIE Proceedings.
The 0.13 micrometer semiconductor manufacturing generation will have transistor gate structures as small as 100 nm, creating a demand for 10 nm gate linewidth control and for measurement precision on the order of 2 nm. This process control requiremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2640f18ab70a79fe7650ea570ea6287e
https://doi.org/10.1117/12.308721
https://doi.org/10.1117/12.308721
Autor:
Rohit Malhotra, Richard C. Elliott, Waiman Ng, Mohan Ananth, Rich Quattrini, Craig W. MacNaughton, Jason C. Yee
Publikováno v:
SPIE Proceedings.
This paper presents results obtained using a low-voltage critical dimension scanning electron microscope (CD SEM) for the imaging and measurement of features patterned on quartz photomasks. The SEM system used was designed for handling silicon wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb9e92a6bf240250e89a07847f9ff03f
https://doi.org/10.1117/12.301185
https://doi.org/10.1117/12.301185