Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Craig A. Gaw"'
Publikováno v:
Microelectronics Reliability. 48:974-984
High voltage 12 V GaAs-based pHEMT devices are a commercial work horse for higher frequency infrastructure applications, including cable television, cellular base stations, and, potentially, WiMAX™ (worldwide interoperability for microwave access).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c2c79eb8d96389a01cc74ee217d9328
https://doi.org/10.1016/j.microrel.2008.03.009
https://doi.org/10.1016/j.microrel.2008.03.009
Publikováno v:
Microelectronics Reliability. 47:1180-1187
Freescale’s true enhancement mode (EMODE) HIGFET is a high performance single supply technology used for wireless power amplifiers. It is the first technology of its kind to be produced in a high volume manufacturing environment. The EMODE HIGFET i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e882836b31b92162e871c1fca4c30e8
https://doi.org/10.1016/j.microrel.2007.02.006
https://doi.org/10.1016/j.microrel.2007.02.006
Publikováno v:
Microelectronics Reliability. 46:1272-1278
The reliability of SiGe:C HBT devices fabricated using the Freescale’s 0.35-μm RF-BICMOS process was evaluated using both conventional and step stress methodologies. This device technology was assessed to determine its capability for various power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bac7ebc82c00ec04863e1d024bd777c9
https://doi.org/10.1016/j.microrel.2006.02.012
https://doi.org/10.1016/j.microrel.2006.02.012
Autor:
Shun Meen Kuo, Wenbin Jiang, S. Tapp, James H. Knapp, Philip Kiely, S. Planer, Davis H. Hartman, Daniel B. Schwartz, Christopher K. Y. Chun, Stephen G. Shook, J. Sauvageau, Paul R. Claisse, Francis J. Carney, Chan Long Shieh, B.M. Foley, Craig A. Gaw, Laura J. Norton, Glenn Raskin, Michael S. Lebby
Publikováno v:
IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B. 19:532-539
Summary form only given. The optical waveguides have a uniformity of 1 dB. The resulting optical links have a jitter of no more than 150 ps not including pulse-width distortion, static skew between channels of less than 200 ps and dissipate 1.5 W. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5c07b71fd9f645b02d5d4257940b0f3
https://doi.org/10.1109/96.533892
https://doi.org/10.1109/96.533892
Publikováno v:
2007 ROCS Workshop[Reliability of Compound Semiconductors Digest].
High voltage 12 volt GaAs-based pHEMT devices are a commercial work horse for higher frequency infrastructure applications, including cable television, cellular base stations, and, potentially, WiMAXtrade. For the device described here a self-aligned
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6d0b4d2a84a9777f556281efd10707c
https://doi.org/10.1109/rocs.2007.4391062
https://doi.org/10.1109/rocs.2007.4391062
Publikováno v:
[Reliability of Compound Semiconductors] ROCS Workshop 2006.
Freescale's true enhancement mode (EMODE) HIGFET is a high performance single supply technology used for wireless power amplifiers. It is the first technology of its kind to be produced in a high volume manufacturing environment. The EMODE HIGFET int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e6ded7232b8baf8d3707121934c5091
https://doi.org/10.1109/rocs.2006.323406
https://doi.org/10.1109/rocs.2006.323406
Autor:
Craig A. Gaw, J. Ramdani, Paul R. Claisse, Michael S. Lebby, Philip Kiely, Wenbin Jiang, B. Lawrence
Publikováno v:
Technical Digest CLEO/Pacific Rim '97 Pacific Rim Conference on Lasers and Electro-Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed5ac19c6fd1df78ab62ef7f9d873a6a
https://doi.org/10.1109/cleopr.1997.610586
https://doi.org/10.1109/cleopr.1997.610586
Publikováno v:
MRS Proceedings. 863
Electromigration tests were performed on passivated electroplated Au four terminal Kelvin line structures using the conventional in situ resistance monitoring technique. The stress conditions were a current density of 2.0 MA/cm2 with ambient temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f391aaf59dca6b84c4fff251167cc54
https://doi.org/10.1557/proc-863-b8.30
https://doi.org/10.1557/proc-863-b8.30
Publikováno v:
Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society.
In summary, GaAs based VCSELs have been shown to be high performance laser diodes which can be manufactured using standard high volume semiconductor manufacturing techniques. By careful attention to parasitics in the device and package design very hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f289edce096ab8d6e1a398dd8b7d57c7
https://doi.org/10.1109/leos.1996.571604
https://doi.org/10.1109/leos.1996.571604
Autor:
Jamal Ramdani, J. Grula, Michael S. Lebby, Wenbin Jiang, Davis H. Hartman, Daniel B. Schwartz, Paul R. Claisse, Craig A. Gaw, Chan Long Shieh, Philip Kiely
Publikováno v:
1996 Proceedings 46th Electronic Components and Technology Conference.
The use of vertical cavity surface emitting lasers (VCSELs)in a parallel optical interconnect for Motorola's OPTOBUS/sup TM/ interconnect was made public over 1 year ago. This was the first time VCSELs were introduced into a product which took advant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0abbf9e696a4979919bf3a18c7d873e
https://doi.org/10.1109/ectc.1996.517404
https://doi.org/10.1109/ectc.1996.517404