Zobrazeno 1 - 10
of 97
pro vyhledávání: '"Craig A. Fisher"'
Autor:
Stephen A. O. Russell, Amador Perez-Tomas, Christopher F. McConville, Craig A. Fisher, Dean P. Hamilton, Philip A. Mawby, Michael R. Jennings
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 4, Pp 256-261 (2017)
A method to improve thermal management of β-Ga2O3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven
Externí odkaz:
https://doaj.org/article/1b8749465ad748a3b34d1df6dfdc14fd
Publikováno v:
CHIMIA, Vol 68, Iss 6 (2014)
A short series of fluorotetrahydroquinolines was synthesised in two steps from diethyl fluoromalonate and appropriate ortho-nitrobenzyl bromide precursors.
Externí odkaz:
https://doaj.org/article/b72bfa18a4ec4c5bb00b8f9407b4f25a
Publikováno v:
Ceramics International. 48:17369-17375
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0937fd4d6bb9b550747c21af19358a4
https://doi.org/10.1016/j.ceramint.2022.03.001
https://doi.org/10.1016/j.ceramint.2022.03.001
Autor:
Mohammed Amer Karout, Mohamed Taha, Craig A. Fisher, Arkadeep Deb, Philip Mawby, Olayiwola Alatise
Publikováno v:
2023 IEEE Applied Power Electronics Conference and Exposition (APEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67247dd11092896b353ca3136d57ac92
https://doi.org/10.1109/apec43580.2023.10131399
https://doi.org/10.1109/apec43580.2023.10131399
Autor:
Mohammed Amer Karout, Olayiwola Alatise, Heaklig Ayala, Craig A. Fisher, Philip Mawby, Mohamed Taha
Publikováno v:
2023 IEEE Conference on Power Electronics and Renewable Energy (CPERE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef3a86ea11ad58143288bfe620b7aeb3
https://doi.org/10.1109/cpere56564.2023.10119544
https://doi.org/10.1109/cpere56564.2023.10119544
Publikováno v:
Ceramics International. 47:35287-35293
The mechanical properties and phase transformation behavior of carbon nanotube (CNT) reinforced 3 mol% yttria-stabilized zirconia (3YSZ) composites prepared by spark plasma sintering are reported for CNT contents between 0 and 7 wt%. CNTs are shown t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69a29e95c3e976b995b3f0cb50092f56
https://doi.org/10.1016/j.ceramint.2021.09.071
https://doi.org/10.1016/j.ceramint.2021.09.071
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c59402c46f3684062e1f296b0bea963
https://doi.org/10.2139/ssrn.4125226
https://doi.org/10.2139/ssrn.4125226
Publikováno v:
Materials Today Communications. 31:103330
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69507034c3a77c3307f1bd813cec8b87
https://doi.org/10.1016/j.mtcomm.2022.103330
https://doi.org/10.1016/j.mtcomm.2022.103330
Autor:
Michael R. Jennings, Amador Pérez-Tomás, Craig A. Fisher, Stephen A. O. Russell, Philip Mawby, Dean P. Hamilton, Christopher F McConville
Publikováno v:
Recercat: Dipósit de la Recerca de Catalunya
Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Recercat. Dipósit de la Recerca de Catalunya
instname
Digital.CSIC. Repositorio Institucional del CSIC
IEEE Journal of the Electron Devices Society, Vol 5, Iss 4, Pp 256-261 (2017)
Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Recercat. Dipósit de la Recerca de Catalunya
instname
Digital.CSIC. Repositorio Institucional del CSIC
IEEE Journal of the Electron Devices Society, Vol 5, Iss 4, Pp 256-261 (2017)
et al.
A method to improve thermal management of β-Ga2O3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device
A method to improve thermal management of β-Ga2O3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::609e22abe9a96fc43dd41ad573834088
http://hdl.handle.net/2072/440941
http://hdl.handle.net/2072/440941
Autor:
Peter M. Gammon, Phil Mawby, Amador Pérez-Tomás, Fan Li, Steven A. Hindmarsh, Michael R. Jennings, Yogesh K. Sharma, David M. Martin, David Walker, Craig A. Fisher
Publikováno v:
Recercat. Dipósit de la Recerca de Catalunya
instname
Digital.CSIC. Repositorio Institucional del CSIC
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Recercat: Dipósit de la Recerca de Catalunya
Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname
Digital.CSIC. Repositorio Institucional del CSIC
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Recercat: Dipósit de la Recerca de Catalunya
Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
et al.
Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present a low resisti
Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present a low resisti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d0fecde62b69d20f14b0f3d22d01ab7d
http://hdl.handle.net/2072/434825
http://hdl.handle.net/2072/434825