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Autor:
Peimyoo, N., Barnes, M. D., Mehew, J. D., De Sanctis, A., Amit, I., Escolar, J., Anastasiou, K., Rooney, A. P., Haigh, S. J., Russo, S., Craciun, M. F., Withers, F.
Like silicon-based semiconductor devices, van der Waals heterostructures will require integration with high-K oxides. This is needed to achieve suitable voltage scaling, improved performance as well as allowing for added functionalities. Unfortunatel
Externí odkaz:
http://arxiv.org/abs/1811.04829
Few layer graphene systems such as Bernal stacked bilayer and rhombohedral (ABC-) stacked trilayer offer the unique possibility to open an electric field tunable energy gap. To date, this energy gap has been experimentally confirmed in optical spectr
Externí odkaz:
http://arxiv.org/abs/1506.05160
We show the successful intercalation of large area (1 cm$^2$) epitaxial few-layer graphene grown on 4H-SiC with FeCl$_3$. Upon intercalation the resistivity of this system drops from an average value of $\approx 200 \ \Omega/sq$ to $\approx 16 \ \Ome
Externí odkaz:
http://arxiv.org/abs/1506.04959
We present the first systematic study of the stability of the structure and electrical properties of FeCl$_3$ intercalated few-layer graphene to high levels of humidity and high temperature. Complementary experimental techniques such as electrical tr
Externí odkaz:
http://arxiv.org/abs/1506.04907
Autor:
Borzenets, I. V., Shimazaki, Y., Jones, G. F., Craciun, M. F., Russo, S., Yamamoto, Y., Tarucha, S.
We demonstrate high efficiency Cooper pair splitting in a graphene-based device. We utilize a true Y-shape design effectively placing the splitting channels closer together: graphene is used as the central superconducting electrode as well as QD outp
Externí odkaz:
http://arxiv.org/abs/1506.04597
Autor:
Jhang, S. H., Craciun, M. F., Schmidmeier, S., Tokumitsu, S., Russo, S., Yamamoto, M., Skourski, Y., Wosnitza, J., Tarucha, S., Eroms, J., Strunk, C.
Publikováno v:
Phys. Rev. B 84, 161408(R) (2011)
We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it caus
Externí odkaz:
http://arxiv.org/abs/1106.4995
Engineering the electronic properties of graphene has triggered great interest for potential applications in electronics and opto-electronics. Here we demonstrate the possibility to tune the electronic transport properties of graphene monolayers and
Externí odkaz:
http://arxiv.org/abs/1105.1751
Since the discovery of graphene -a single layer of carbon atoms arranged in a honeycomb lattice - it was clear that this truly is a unique material system with an unprecedented combination of physical properties. Graphene is the thinnest membrane pre
Externí odkaz:
http://arxiv.org/abs/1105.1479
Publikováno v:
NanoToday(2011)
Novel materials are in great demand for future applications. The discovery of graphene, a one atom thick carbon layer, holds the promise for unique device architectures and functionalities exploiting unprecedented physical phenomena. The ability to e
Externí odkaz:
http://arxiv.org/abs/1101.4383