Zobrazeno 1 - 10
of 189
pro vyhledávání: '"Cowern, N."'
Solid-phase epitaxial crystallization of amorphous Si layers on a crystalline Si substrate during B-ion irradiation is investigated over the temperature range 293 - 573 K. Regrowth occurs at all measured temperatures, with activation energy 0.07 eV a
Externí odkaz:
http://arxiv.org/abs/1512.00800
Autor:
Cristiano, F., Lamrani, Y., Severac, F., Gavelle, M., Boninelli, S., Cherkashin, N., Marcelot, O., Claverie, A., Lerch, W., Paul, S., Cowern, N.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B December 2006 253(1-2):68-79
Autor:
Giles, L.F., Colombeau, B., Cowern, N., Molzer, W., Schaefer, H., Bach, K.H., Haibach, P., Roozeboom, F.
Publikováno v:
In Solid State Electronics 2005 49(4):618-627
Autor:
Ferri, M., Solmi, S., Giubertoni, D., Bersani, M., Hamilton, J. J., Kah, M., Kirkby, K., Collart, E. J. H., Cowern, N. E.B.
Publikováno v:
Journal of Applied Physics; Nov2007, Vol. 102 Issue 10, p103707, 6p, 8 Graphs
Publikováno v:
Journal of Applied Physics; 12/15/2003, Vol. 94 Issue 12, p7520-7525, 6p, 1 Diagram, 6 Graphs
Publikováno v:
Journal of Applied Physics; 4/15/1993, Vol. 73 Issue 8, p4048, 6p, 5 Black and White Photographs, 2 Charts, 5 Graphs
Publikováno v:
Journal of Applied Physics; 12/15/1990, Vol. 68 Issue 12, p6191, 8p
Autor:
Cowern, N. E. B.
Publikováno v:
Journal of Applied Physics; 11/1/1988, Vol. 64 Issue 9, p4484, 7p, 4 Graphs