Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Covaci, Lucian"'
Lattice deformations in graphene couple to the low-energy electronic degrees of freedom as pseudo scalar and gauge fields. Using molecular dynamics simulations, we show that the optical component of the displacement field, i.e., the relative motion o
Externí odkaz:
http://arxiv.org/abs/2409.02250
The Lieb lattice is one of the simplest lattices that exhibits both linear Dirac-like and flat topological electronic bands. We propose to further tailor its electronic properties through periodic 1D electrostatic superlattices (SLs), which, in the l
Externí odkaz:
http://arxiv.org/abs/2403.10382
Publikováno v:
SciPost Phys. Core 7, 004 (2024)
We provide a comprehensive analysis of the prominent tight-binding (TB) models for transition metal dichalcogenides (TMDs) available in the literature. We inspect the construction of these TB models, discuss their parameterization used and conduct a
Externí odkaz:
http://arxiv.org/abs/2312.00498
Autor:
Conti, Sara, Chaves, Andrey, Pandey, Tribhuwan, Covaci, Lucian, Peeters, François M., Neilson, David, Milošević, Milorad V.
Publikováno v:
Nanoscale, 2023,15, 14032-14042
We explore the flatness of conduction and valence bands of interlayer excitons in MoS$_2$/WSe$_2$ van der Waals heterobilayers, tuned by interlayer twist angle, pressure, and external electric field. We employ an efficient continuum model where the m
Externí odkaz:
http://arxiv.org/abs/2303.07755
When using hexagonal boron-nitride (hBN) as a substrate for graphene, the resulting moir\'e pattern creates secondary Dirac points. By encapsulating a multilayer graphene within aligned hBN sheets the controlled moir\'e stacking may offer even richer
Externí odkaz:
http://arxiv.org/abs/2211.16351
Publikováno v:
Carbon 171, 551-559 (2021)
The flexoelectric and electronic properties of zig-zag graphene nanoribbons are explored under mechanical bending using state of the art first principles calculations. A linear dependence of the bending induced out of plane polarization on the applie
Externí odkaz:
http://arxiv.org/abs/2009.06948
Autor:
Mao, Jinhai, Milovanović, Slaviša P., Anđelković, Miša, Lai, Xinyuan, Cao, Yang, Watanabe, Kenji, Taniguchi, Takashi, Covaci, Lucian, Peeters, Francois M., Geim, Andre K., Jiang, Yuhang, Andrei, Eva Y.
Publikováno v:
Nature 584, 215-220, (2020)
Two-dimensional atomic crystals can radically change their properties in response to external influences such as substrate orientation or strain, resulting in essentially new materials in terms of the electronic structure. A striking example is the c
Externí odkaz:
http://arxiv.org/abs/2006.01660
Autor:
João, Simão M., Anđelković, Miša, Covaci, Lucian, Rappoport, Tatiana, Lopes, João M. V. P., Ferreira, Aires
Publikováno v:
R. Soc. open sci. 7, 191809 (2020)
We present KITE, a general purpose open-source tight-binding software for accurate real-space simulations of electronic structure and quantum transport properties of large-scale molecular and condensed systems with tens of billions of atomic orbitals
Externí odkaz:
http://arxiv.org/abs/1910.05194
Autor:
Jiang, Yuhang, Anđelković, Miša, Milovanović, Slaviša P., Covaci, Lucian, Lai, Xinyuan, Cao, Yang, Watanabe, Kenji, Taniguchi, Takashi, Peeters, Francois M., Geim, Andre K., Andrei, Eva Y.
Interactions between stacked two-dimensional (2D) atomic crystals can radically change their properties, leading to essentially new materials in terms of the electronic structure. Here we show that monolayers placed on an atomically flat substrate ca
Externí odkaz:
http://arxiv.org/abs/1904.10147
Autor:
Homm, Pía, Dillemans, Leander, Menghini, Mariela, Van Bilzen, Bart, Bakalov, Petar, Su, Chen-Yi, Lieten, Ruben, Houssa, Michel, Esfahani, Davoud Nasr, Covaci, Lucian, Peeters, Francois, Seo, Jin Won, Locquet, Jean-Pierre
Publikováno v:
Appl. Phys. Lett. 107, 111904 (2015)
We have grown epitaxial Cr-doped V$_2$O$_3$ thin films with Cr concentrations between $0$ and $20\%$ on $(0001)$-Al$_2$O$_3$ by oxygen-assisted molecular beam epitaxy. For the highly doped samples (> $3\%$), a regular and monotonous increase of the r
Externí odkaz:
http://arxiv.org/abs/1509.05866