Low-Temperature Synthesis of WSe 2 by the Selenization Process under Ultrahigh Vacuum for BEOL Compatible Reconfigurable Neurons.

Autor: Nibhanupudi SST; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Roy A; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States.; Department of Physics, Birla Institute of Technology Mesra, Ranchi, Jharkhand 835215, India., Chowdhury S; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Schalip R; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Coupin MJ; Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States., Matthews KC; Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States., Alam MH; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Satpati B; Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700 064, India., Movva HCP; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Luth CJ; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Wu S; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Warner JH; Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States., Banerjee SK; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 May 01; Vol. 16 (17), pp. 22326-22333. Date of Electronic Publication: 2024 Apr 18.

Mapping Nanoscale Electrostatic Field Fluctuations around Graphene Dislocation Cores Using Four-Dimensional Scanning Transmission Electron Microscopy (4D-STEM).

Autor: Coupin MJ; Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States., Wen Y; Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom., Lee S; Department of Materials Science & Engineering, Seoul National University, Seoul 08826, Republic of Korea.; Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea., Saxena A; Walker Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States.; Oden Institute for Computational Engineering and Sciences, The University of Texas at Austin, Austin, Texas 78712, United States., Ophus C; National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, One Cyclotron Road, Building 67, Berkeley, California 94720, United States., Allen CS; Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom.; Electron Physical Science Imaging Centre, Diamond Light Source Ltd., Didcot OX11 0DE, U.K., Kirkland AI; Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom.; Electron Physical Science Imaging Centre, Diamond Light Source Ltd., Didcot OX11 0DE, U.K.; Rosalind Franklin Institute, Harwell Science and Innovation Campus, Didcot OX11 0QX, U.K., Aluru NR; Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States.; Walker Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States.; Oden Institute for Computational Engineering and Sciences, The University of Texas at Austin, Austin, Texas 78712, United States., Lee GD; Department of Materials Science & Engineering, Seoul National University, Seoul 08826, Republic of Korea.; Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea., Warner JH; Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States.; Walker Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States.

Publikováno v: Nano letters [Nano Lett] 2023 Aug 09; Vol. 23 (15), pp. 6807-6814. Date of Electronic Publication: 2023 Jul 24.

Lattice-Mismatch-Driven Small-Angle Moiré Twists in Epitaxially Grown 2D Vertical Layered Heterostructures.

Autor: Lu Y; Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK., Chen J; Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK., Coupin MJ; Material Sciences and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas, 78712, USA.; Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas, 78712, USA., Sinha S; Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK., Warner JH; Material Sciences and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas, 78712, USA.; Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas, 78712, USA.

Publikováno v: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2022 Oct; Vol. 34 (43), pp. e2205403. Date of Electronic Publication: 2022 Sep 25.