Zobrazeno 1 - 10
of 310
pro vyhledávání: '"Couet, S."'
Autor:
Lozano, D. P., Mongillo, M., Piao, X., Couet, S., Wan, D., Canvel, Y., Vadiraj, A. M., Ivanov, Ts., Verjauw, J., Acharya, R., Van Damme, J., Mohiyaddin, F. A., Jussot, J., Gowda, P. P., Pacco, A., Raes, B., Van de Vondel, J., Radu, I. P., Govoreanu, B., Swerts, J., Potočnik, A., De Greve, K.
The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. {\alpha}-tantalum is a superconductor that has proven effective in reducing dielectric loss
Externí odkaz:
http://arxiv.org/abs/2211.16437
Autor:
Meng, F., Lee, S. -Y., Zografos, O., Gupta, M., Nguyen, V. D., De Micheli, G., Cotofana, S., Asselberghs, I., Adelmann, C., Kar, G. Sankar, Couet, S., Ciubotaru, F.
This paper addresses the question: Can spintronic circuits based on Magnetic Tunnel Junction (MTJ) transducers outperform their state-of-the-art CMOS counterparts? To this end, we use the EPFL combinational benchmark sets, synthesize them in 7 nm CMO
Externí odkaz:
http://arxiv.org/abs/2209.01999
Autor:
Wu, Y. C., Garello, K., Kim, W., Gupta, M., Perumkunnil, M., Kateel, V., Couet, S., Carpenter, R., Rao, S., Van Beek, S., Sethu, K. K. Vudya, Yasin, F., Crotti, D., Kar, G. S.
Publikováno v:
Phys. Rev. Applied 15, 064015 (2021)
Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory (MRAM) applica
Externí odkaz:
http://arxiv.org/abs/2104.09599
Autor:
Verjauw, J., Potočnik, A., Mongillo, M., Acharya, R., Mohiyaddin, F., Simion, G., Pacco, A., Ivanov, Ts., Wan, D., Vanleenhove, A., Souriau, L., Jussot, J., Thiam, A., Swerts, J., Piao, X., Couet, S., Heyns, M., Govoreanu, B., Radu, I.
Publikováno v:
Phys. Rev. Applied 16, 014018 (2021)
The coherence of state-of-the-art superconducting qubit devices is predominantly limited by two-level-system defects, found primarily at amorphous interface layers. Reducing microwave loss from these interfaces by proper surface treatments is key to
Externí odkaz:
http://arxiv.org/abs/2012.10761
Autor:
Devolder, T., Bultynck, O., Bouquin, P., Nguyen, V. D., Rao, S., Wan, D., Sorée, B., Radu, I. P., Kar, G. S., Couet, S.
We analyse the phenomenon of back-hopping in spin-torque induced switching of the magnetization in perpendicularly magnetized tunnel junctions. The analysis is based on single-shot time-resolved conductance measurements of the pulse-induced back-hopp
Externí odkaz:
http://arxiv.org/abs/2006.05108
To get stable perpendicularly magnetized tunnel junctions at small device dimensions, composite free layers that comprise two MgO/FeCoB interfaces as sources of interface anisotropy are generally used. Proper cristallisation and annealing robustness
Externí odkaz:
http://arxiv.org/abs/1909.02741
Autor:
Garello, K., Yasin, F., Hody, H., Couet, S., Souriau, L., Sharifi, S. H., Swerts, J., Carpenter, R., Rao, S., Kim, W., Wu, J., Sethu, K. K. V., Pak, M., Jossart, N., Crotti, D., Furnémont, A., Kar, G. S.
Publikováno v:
2019 Symposium on VLSI Technology
We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonstrate it on a 300 mm wafer, using CMOS-compatible processes, and we sho
Externí odkaz:
http://arxiv.org/abs/1907.08012
We study the offset fields affecting the free layer of perpendicularly magnetized tunnel junctions. In extended films, the free layer offset field results from interlayer exchange coupling with the reference layer through the MgO tunnel oxide. The fr
Externí odkaz:
http://arxiv.org/abs/1904.10170
Autor:
Garello, K., Yasin, F., Couet, S., Souriau, L., Swerts, J., Rao, S., Van Beek, S., Kim, W., Liu, E., Kundu, S., Tsvetanova, D., Jossart, N., Croes, K., Grimaldi, E., Baumgartner, M., Crotti, D., Furnémont, A., Gambardella, P., Kar, G. S.
Publikováno v:
2018 IEEE Symposium on VLSI Circuits
We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have ver
Externí odkaz:
http://arxiv.org/abs/1810.10356
Publikováno v:
J. Phys. D:Appl. Phys. 51 135002 (2018)
Using broadband ferromagnetic resonance, we measure the damping parameter of [Co(5 \r{A})/Pt(3 \r{A})]${\times 6}$ multilayers whose growth was optimized to maximize the perpendicular anisotropy. Structural characterizations indicate abrupt interface
Externí odkaz:
http://arxiv.org/abs/1807.04977