Zobrazeno 1 - 10
of 2 695
pro vyhledávání: '"Couet, A."'
Autor:
Hoffmann, Marco, Krizakova, Viola, Kateel, Vaishnavi, Cai, Kaiming, Couet, Sebastien, Gambardella, Pietro
Publikováno v:
Phys. Rev. Applied 22, 034052, 2024
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization switching o
Externí odkaz:
http://arxiv.org/abs/2409.16454
Autor:
Dieny, Bernard, Aggarwal, Sanjeev, Naik, Vinayak Bharat, Couet, Sebastien, Coughlin, Thomas, Fukami, Shunsuke, Garello, Kevin, Guedj, Jack, Incorvia, Jean Anne C., Lebrun, Laurent, Lee, Kyung-Jin, Leonelli, Daniele, Noh, Yonghwan, Salimy, Siamak, Soss, Steven, Thomas, Luc, Wang, Weigang, Worledge, Daniel
This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic field and typical magnitudes of mag
Externí odkaz:
http://arxiv.org/abs/2409.05584
Autor:
Zhu, Changzu, Song, Jia, Xu, Xiaorui, Wang, Chengyu, Tong, Yang, Lin, Lve, Guo, Shaoqiang, Zhou, Wentao, Couet, Adrien, Wang, Yafei
Analogous to the aqueous solution where the pH of the solvent affects its multiple behaviors, the Lewis acidity-basicity of molten salts also greatly influences their thermophysical and thermochemical properties. In the study, we develop ion probes t
Externí odkaz:
http://arxiv.org/abs/2406.13368
Autor:
Ammigan, K., Arora, G., Bidhar, S., Burleigh, A., Pellemoine, F., Couet, A., Crnkovich, N., Szlufarska, I.
Publikováno v:
JACoW IPAC2024 (2024) WECN2
As beam power continues to increase in next-generation accelerator facilities, high-power target systems face crucial challenges. Components like beam windows and particle-production targets must endure significantly higher levels of particle fluence
Externí odkaz:
http://arxiv.org/abs/2405.18545
Autor:
Nelaturu, Phalgun, Hattrick-Simpers, Jason R., Moorehead, Michael, Jambur, Vrishank, Szlufarska, Izabela, Couet, Adrien, Thoma, Dan J.
Multi-principal element alloys open large composition spaces for alloy development. The large compositional space necessitates rapid synthesis and characterization to identify promising materials, as well as predictive strategies for alloy design. Ad
Externí odkaz:
http://arxiv.org/abs/2310.04021
Publikováno v:
npj Spintronics, Vol 2, Iss 1, Pp 1-15 (2024)
Abstract Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes.
Externí odkaz:
https://doaj.org/article/0fe84b0c28e94e3a99770c56d832bdce
Autor:
Yann Combret, Margaux Machefert, Mélody Couet, Tristan Bonnevie, Francis-Edouard Gravier, Timothée Gillot, Pascal Le Roux, Roger Hilfiker, Clément Medrinal, Guillaume Prieur
Publikováno v:
Italian Journal of Pediatrics, Vol 50, Iss 1, Pp 1-9 (2024)
Abstract Background Chest physiotherapy for airway clearance is not recommended in children hospitalized with bronchiolitis. The updated Cochrane meta-analysis suggests that slow expiratory techniques could slightly improve clinical severity, but the
Externí odkaz:
https://doaj.org/article/61b11aca2a5b4a61bad691e63bf46c0a
Autor:
Borràs, Vicent J, Carpenter, Robert, Žaper, Liza, Rao, Siddharth, Couet, Sébastien, Munsch, Mathieu, Maletinsky, Patrick, Rickhaus, Peter
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by device-to-device variabil
Externí odkaz:
http://arxiv.org/abs/2306.15502
Autor:
Kateel, Vaishnavi, Krizakova, Viola, Rao, Siddharth, Cai, Kaiming, Gupta, Mohit, Monteiro, Maxwel Gama, Yasin, Farrukh, Sorée, Bart, De Boeck, Johan, Couet, Sebastien, Gambardella, Pietro, Kar, Gouri Sankar, Garello, Kevin
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the requirement of the
Externí odkaz:
http://arxiv.org/abs/2305.03961
Autor:
Ramamoorthy Ramesh, Sayeef Salahuddin, Suman Datta, Carlos H. Diaz, Dmitri E. Nikonov, Ian A. Young, Donhee Ham, Meng-Fan Chang, Win-San Khwa, Ashwin Sanjay Lele, Christian Binek, Yen-Lin Huang, Yuan-Chen Sun, Ying-Hao Chu, Bhagwati Prasad, Michael Hoffmann, Jia-Mian Hu, Zhi (Jackie) Yao, Laurent Bellaiche, Peng Wu, Jun Cai, Joerg Appenzeller, Supriyo Datta, Kerem Y. Camsari, Jaesuk Kwon, Jean Anne C. Incorvia, Inge Asselberghs, Florin Ciubotaru, Sebastien Couet, Christoph Adelmann, Yi Zheng, Aaron M. Lindenberg, Paul G. Evans, Peter Ercius, Iuliana P. Radu
Publikováno v:
APL Materials, Vol 12, Iss 9, Pp 099201-099201-73 (2024)
Externí odkaz:
https://doaj.org/article/b2b9e2e5da1a4c99bd0b8ddeab09dc2b