Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Costel Cotirlan"'
Publikováno v:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies XI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d36dc67d72f5a07a2a86bfcb09db87b7
https://doi.org/10.1117/12.2643267
https://doi.org/10.1117/12.2643267
Autor:
R. V. Ghita, Costel Cotirlan, Constantin Catalin Negrila, M. F. Lazarescu, Constantin Logofatu
Publikováno v:
Materials Science in Semiconductor Processing. 82:62-66
InGeNi ohmic contacts on n-type semi-insulating GaAs(110) cleaved surfaces were fabricated. Cleaving semiconductor single crystal ensures the obtaining of semiconductor surfaces almost ideal in terms of chemical purity and stoichiometry. The chemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da3c1ad3ce09b24cd3e03c6bb078fa7c
https://doi.org/10.1016/j.mssp.2018.02.022
https://doi.org/10.1016/j.mssp.2018.02.022
Autor:
R. V. Ghita, Costel Cotirlan-Simioniuc, Lucian Trupina, Constantin Logofatu, Constantin-Catalin Negrila
Publikováno v:
Nanoscaled Films and Layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13fa28c7b5d375a0981ab64fd8d16b09
https://doi.org/10.5772/67916
https://doi.org/10.5772/67916
Autor:
R. V. Ghita, Constantin-Catalin Negrila, Florica Frumosu, Lucian Trupina, M. F. Lazarescu, Constantin Logofatu, Costel Cotirlan
Publikováno v:
Journal of Nanomaterials, Vol 2016 (2016)
The depth composition of the thin layer alloy, AuGeNi, devoted to acting as an ohmic contact on n-GaAs(110) has been investigated by in situ XPS combined with Argon ion sputtering techniques. The fresh cleaved surfaces, supposed to be free of oxygen,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cb6d6a8d122872209e746645b98d391
https://doaj.org/article/750da00e46964a2f8adbfd9025707344
https://doaj.org/article/750da00e46964a2f8adbfd9025707344
Autor:
Florica Ungureanu, Constantin Logofatu, Corneliu Ghica, Catalin-Constantin Negrila, R. V. Ghita, Costel Cotirlan, Adrian-Stefan Manea, Mihail-Florin Lazarescu
Publikováno v:
Crystalline Silicon-Properties and Uses
Due to its dominant role in silicon devices technologies [1, 2] the SiO2/Si interface has been intensively studied in the last five decades. The ability to form a chemically stable protective layer of silicon dioxide (SiO2) at the surface of silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ffcdf8f17cd8f994a34e3a3830b5e67c
http://www.intechopen.com/articles/show/title/study-of-sio2-si-interface-by-surface-techniques
http://www.intechopen.com/articles/show/title/study-of-sio2-si-interface-by-surface-techniques