Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Costas Argyrides"'
Publikováno v:
2022 IEEE International Test Conference (ITC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::122f5554c4b6c04036814748a949d7bf
https://doi.org/10.1109/itc50671.2022.00089
https://doi.org/10.1109/itc50671.2022.00089
Autor:
Minqiang Peng, Youfa Wu, Jialiang Li, Alex Yu, Grigor Tshagharyan, Costas Argyrides, Vilas Sridharan, Gurgen Harutyunyan, Yervant Zorian, Nilanjan Mukherjee
Publikováno v:
2022 IEEE 40th VLSI Test Symposium (VTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::204a5d475b508dda9fa4743eae32adf9
https://doi.org/10.1109/vts52500.2021.9794190
https://doi.org/10.1109/vts52500.2021.9794190
Publikováno v:
e-Archivo. Repositorio Institucional de la Universidad Carlos III de Madrid
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Single Event Transients (SETs) can be a major concern for combinational circuits. Its importance grows as technology scales because a small charge can create a large disturbance on a circuit node. One example of circuits that can suffer from SETs is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd56c56e7b06c3de8d6baf10de82cab8
https://hdl.handle.net/10016/34463
https://hdl.handle.net/10016/34463
Publikováno v:
International Journal of Electronics. 96:1161-1173
In this paper, we present a systematic method for designing single error correcting (SEC) and double error detecting finite field (Galois field) multipliers over GF(2 m ). The detection and correct...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a692f6ada11ed6a3b5a1e238d1520533
https://doi.org/10.1080/00207210903168348
https://doi.org/10.1080/00207210903168348
Publikováno v:
EWDTS
Technology evolution dictates ever increasing density of transistors in chips, lower power consumption and higher performance. In such environment occurrence of multiple-bit upsets (MBUs) is a concern. That, together with the presence of fault-relate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8a1050512690da68d9d693e8f2e6343
https://doi.org/10.1109/ewdts.2010.5742055
https://doi.org/10.1109/ewdts.2010.5742055
Publikováno v:
ISVLSI
Nanotechnology based fabrication, which relies on self-assembly of nanotubes or nanowires has been predicted to be an alternative to silicon technology since lithography based IC is approaching its limit in terms of feature size. However, such proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a98863419ae07deea86b6893dd163ae9
https://doi.org/10.1109/isvlsi.2010.113
https://doi.org/10.1109/isvlsi.2010.113