Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Corey Lemley"'
Autor:
Alex Hubbard, Lior Huli, Shinichiro Kawakami, Anuja De Silva, Naoki Shibata, Karen Petrillo, Luciana Meli, Dave Hetzer, Corey Lemley, Saumya Sharma, Takashi Shimoaoki, Cody Murray, Kouichirou Tanaka, Hashimoto Yusaku
Publikováno v:
2019 IEEE Albany Nanotechnology Symposium (ANS).
With the insertion of EUV lithography into high volume manufacturing, mature lithographic materials and processes are required on multiple fronts. Not only do lithographic materials require optimization to reduce stochastic effects; processing techni
Autor:
Alex Hubbard, Nelson Felix, Shinichiro Kawakami, Corey Lemley, Akiteru Ko, Takahiro Shiozawa, Kenichi Ueda, Akiko Kai, Wada Toshiharu, Naoki Shibata, Karen Petrillo, Luciana Meli, Akihiro Sonoda, Dave Hetzer, Cody Murray, Yuichiro Miyata, Lior Huli, Hidetsugu Yano
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X.
Extreme ultraviolet lithography (EUVL) technology is one of the leading candidates under consideration for enabling the next generation of devices, for 7nm node and beyond. As the focus shifts to driving down the 'effective' k1 factor and enabling th
Autor:
Luciana Meli, Karen Petrillo, Shinichiro Kawakami, Corey Lemley, Ko Akiteru, Cody Murray, Lior Huli, Alex Hubbard, Dave Hetzer, Eric Liu, Nelson Felix, Rick Johnson, Naoki Shibata
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2018.
Extreme ultraviolet lithography (EUVL) technology is one of the leading candidates under consideration for enabling the next generation of devices, for 7nm node and beyond. As the focus shifts to driving down the 'effective' k1 factor and enabling th
Defect detection strategies and process partitioning for SE EUV patterning (Conference Presentation)
Autor:
Nelson Felix, Barry Saville, Corey Lemley, Bassem Hamieh, Christopher F. Robinson, Shinichiro Kawakami, Jeffrey C. Shearer, Chet Lenox, Yann Mignot, Takeshi Shimoaoki, Eric Liu, Hiroshi Ichinomiya, Koichiro Tanaka, Ankit Jain, Koichi Hontake, Shravan Matham, Heungsoo Choi, John C. Arnold, Luciana Meli, Anuja De Silva, Benjamin D. Briggs, Ko Akiteru, Hashimoto Yusaku, Lior Huli, Akiko Kai, Dave Hetzer, Karen Petrillo
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
The key challenge for enablement of a 2nd node of single-expose EUV patterning is understanding and mitigating the patterning-related defects that narrow the process window. Typical in-line inspection techniques, such as broadband plasma (291x) and e
Autor:
Shinichiro Kawakami, Lior Huli, Eric Liu, Alex Hubbard, Akiteru Ko, Hashimoto Yusaku, Cody Murray, Luciana Meli, Nelson Felix, Anuja De Silva, Corey Lemley, Koichiro Tanaka, R. Johnson, Karen Petrillo, Yongan Xu, Dave Hetzer, Koichi Hontake, Takeshi Shimoaoki
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2017.
Extreme ultraviolet lithography (EUVL) technology is one of the leading candidates under consideration for enabling the next generation of devices, for 7nm node and beyond. As the focus shifts to driving down the 'effective' k1 factor and enabling th
Autor:
Anuja De Silva, Alex Hubbard, Danielle Durrant, John C. Arnold, Corey Lemley, Cody Murray, Dave Hetzer, Nelson Felix, Shinichiro Kawakami, Lior Huli, Luciana Meli, R. Johnson, Karen Petrillo, Koichi Matsunaga, Koichi Hontake
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) technology is one of the leading candidates for enabling the next generation devices, for 7nm node and beyond. As the technology matures, further improvement is required in the area of blanket film defectivity,
Autor:
Bong Cheol Kim, Bassem Hamieh, Genevieve Beique, Karen Petrillo, Eunshoo Han, Erik Verduijn, Lei Sun, Martin Burkhardt, Shinichiro Kawakami, Corey Lemley, Jongsu Kim, Dave Hetzer, Yann Mignot, Andre Labonte, R. Johnson, Stuart A. Sieg, Indira Seshadri, Geng Han, Derren N. Dunn, Nelson Felix, Eric R. Miller, Hao Tang, Koichi Hontake, Anuja De Silva, Yongan Xu, Lior Huli, Dan Corliss, Koichi Matsunaga, Christopher F. Robinson, Mary Breton, Nicole Saulnier, Luciana Meli
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
The feature scaling and patterning control required for the 7nm node has introduced EUV as a candidate lithography technology for enablement. To be established as a front-up lithography solution for those requirements, all the associated aspects with
Autor:
Chet Lenox, Bassem Hamieh, Corey Lemley, Hiroshi Ichinomiya, Christopher F. Robinson, Ankit Jain, Ko Akiteru, Yann Mignot, Lior Huli, Karen Petrillo, Jeffrey C. Shearer, Shinichiro Kawakami, Anuja De Silva, Akiko Kai, Takeshi Shimoaoki, Koichiro Tanaka, Benjamin D. Briggs, Eric Liu, Barry Saville, John C. Arnold, Shravan Matham, Koichi Hontake, Hashimoto Yusaku, Heungsoo Choi, Luciana Meli, Dave Hetzer, Nelson Felix
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 18:1
The key challenge for enablement of a second node of single-expose EUV patterning is understanding and mitigating the patterning-related defects that narrow the process window. Typical in-line inspection techniques, such as broadband plasma and e-bea