Zobrazeno 1 - 10
of 1 742
pro vyhledávání: '"Cordier, Y."'
Autor:
Aristegui, R., Lefebvre, P., Brimont, C., Guillet, T., Vladimirova, M., Paradisanos, I., Robert, C., Marie, X., Urbaszek, B., Chenot, S., Cordier, Y., Damilano, B.
Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. This electric field, and thus exciton energy, can be reduced by deposit
Externí odkaz:
http://arxiv.org/abs/2306.04404
Autor:
Giannazzo, F., Panasci, S. E., Schilirò, E., Greco, G., Roccaforte, F., Sfuncia, G., Nicotra, G., Cannas, M., Agnello, S., Frayssinet, E., Cordier, Y., Michon, A., Koos, A., Pécz, B.
The integration of two-dimensional $MoS_{2}$ with $GaN$ recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial $GaN$ templates on sap
Externí odkaz:
http://arxiv.org/abs/2304.12213
Autor:
Aristegui, R., Chiaruttini, F., Jouault, B., Lefebvre, P., Brimont, C., Guillet, T., Vladimirova, M., Chenot, S., Cordier, Y., Damilano, B.
A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps i
Externí odkaz:
http://arxiv.org/abs/2203.13761
Autor:
Giannazzo, F., Dagher, R., Schilirò, E., Panasci, S. E., Greco, G., Nicotra, G., Roccaforte, F., Agnello, S., Brault, J., Cordier, Y., Michon, A.
Publikováno v:
Nanotechnology 32 (2020) 015705
The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire templates
Externí odkaz:
http://arxiv.org/abs/2009.08673
Publikováno v:
In e-Prime - Advances in Electrical Engineering, Electronics and Energy September 2023 5
Autor:
Chiaruttini, F., Guillet, T., Brimont, C., Jouault, B., Lefebvre, P., Chenot, S., Cordier, Y., Damilano, B., Vladimirova, M.
Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confineme
Externí odkaz:
http://arxiv.org/abs/1902.02974
Publikováno v:
In Microelectronic Engineering 15 May 2023 277
Autor:
Mehta, J., Abid, I., Bassaler, J., Pernot, J., Ferrandis, P., Nemoz, M., Cordier, Y., Rennesson, S., Tamariz, S., Semond, F., Medjdoub, F.
Publikováno v:
In e-Prime - Advances in Electrical Engineering, Electronics and Energy March 2023 3
Autor:
Lee, C. -M., Warring, H., Vézian, S., Damilano, B., Granville, S., Khalfioui, M. Al, Cordier, Y., Trodahl, H. J., Ruck, B. J., Natali, F.
We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 {\Omega}.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concen
Externí odkaz:
http://arxiv.org/abs/1410.8228
Autor:
Laurent, T., Sharma, R., Torres, J., Nouvel, P., Blin, S., Varani, L., Cordier, Y., Chmielowska, M., Chenot, S., Faurie, JP, Beaumont, B., Shiktorov, P., Starikov, E., Gruzinskis, V., Korotyevyev, V., Kochelap, V.
We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applie
Externí odkaz:
http://arxiv.org/abs/1105.3131