Zobrazeno 1 - 10
of 499
pro vyhledávání: '"Copel, M."'
Autor:
Solomon, P. M., Bryce, B. A., Kuroda, M. A., Keech, R., Shett, S., Shaw, T. M., Copel, M., Hung, L. -W., Schrott, A. G., Armstrong, C., Gordon, M. S., Reuter, K. B., Theis, T. N., Haensch, W., Rossnagel, S. M., Miyazoe, H., Elmegreen, B. G., Liu, X. -H., Trolier-McKinstry, S., Martyna, G. J, Newns, D. M.
The information age challenges computer technology to process an exponentially increasing computational load on a limited energy budget - a requirement that demands an exponential reduction in energy per operation. In digital logic circuits, the swit
Externí odkaz:
http://arxiv.org/abs/1503.07467
We have determined the growth mode of graphene on SiC(0001) and SiC(000-1) using ultra-thin, isotopically-labeled Si13C `marker layers' grown epitaxially on the Si12C surfaces. Few-layer graphene overlayers were formed via thermal decomposition at el
Externí odkaz:
http://arxiv.org/abs/1108.2627
Publikováno v:
Appl. Phys. Lett. 98, 113103 (2011)
Depth profiling of graphene with high-resolution ion beam analysis is a practical method for analysis of monolayer thicknesses of graphene. Not only is the energy resolution sufficient to resolve graphene from underlying SiC, but by use of isotope la
Externí odkaz:
http://arxiv.org/abs/1102.0675
Autor:
Oida, S., McFeely, F. R., Hannon, J. B., Tromp, R. M., Copel, M., Chen, Z., Sun, Y., Farmer, D. B., Yurkas, J.
When epitaxial graphene layers are formed on SiC(0001), the first carbon layer (known as the "buffer layer"), while relatively easy to synthesize, does not have the desirable electrical properties of graphene. The conductivity is poor due to a disrup
Externí odkaz:
http://arxiv.org/abs/1003.5702
Publikováno v:
In Materials Science in Semiconductor Processing 2009 12(1):25-30
Autor:
Narayanan, V., Paruchuri, V.K., Cartier, E., Linder, B.P., Bojarczuk, N., Guha, S., Brown, S.L., Wang, Y., Copel, M., Chen, T.C.
Publikováno v:
In Microelectronic Engineering 2007 84(9):1853-1856
Publikováno v:
In Surface Science 2007 601(23):5559-5570
Publikováno v:
In Microelectronic Engineering 2003 69(2):145-151
Publikováno v:
In Microelectronic Engineering 2001 59(1):341-349
Publikováno v:
Journal of Applied Physics; Aug2010, Vol. 108 Issue 2, p024105, 5p, 1 Diagram, 6 Graphs