Effect of implant temperature on secondary defects created by MeV Sn implantation in silicon.

Autor: Wong-Leung, J., Jagadish, C., Conway, M. J., Fitz Gerald, J. D.

Publikováno v: Journal of Applied Physics; 3/1/2001, Vol. 89 Issue 5, p2556, 4p, 2 Black and White Photographs, 1 Chart, 1 Graph

AERIAL APPLICATION OF PHOSPHATE FERTILISERS TO RADIATA PINE FORESTS IN NEW ZEALAND

Autor: CONWAY, M. J.

Publikováno v: Empire Forestry Review, 1962 Sep 01. 413 (109), 234-245.

Externí odkaz: https://www.jstor.org/stable/42600855

Interaction of defects and metals with nanocavities in silicon

Autor: Williams, J.S., Ridgway, M.C., Conway, M.J., Williams, J. S., Ridgway, M. C., Conway, M. J., Wong-Leung, J., Zhu, X. F., Petravić, Mladen, Fortuna, F., Ruault, M. -O., Bernas, H., Kinomura, A., Nakano, Y., Hayashi, Y.

Publikováno v: ResearcherID
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Nuclear Instruments and Methods in Physics Research B
Materials Science with Ion Beams E-MRS 2000 Spring Meeting Symposium R.
Materials Science with Ion Beams E-MRS 2000 Spring Meeting Symposium R., May 2000, Strasbourg, France. pp.33-43

Ion implantation of H or He into silicon, followed by annealing can create a band of nanocavities. Such nanocavities can exhibit a range of interesting and often non-equilibrium interactions with defects and metals during subsequent implantation and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2600d321a687c39d8d3044e8f559a27d
https://doi.org/10.1016/s0168-583x(01)00503-1

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Interactions of Point Defects and Impurities With Open Volume Defects in Silicon.

Autor: Williams, J. S., Ridgway, M. C., Conway, M. J., Wong-Leung, J., Williams, B. C., Petravic, M., Fortuna, F., Ruault, M. O., Bernas, H.

Publikováno v: MRS Online Proceedings Library; 2000, Vol. 647 Issue 1, p1-11, 11p